Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 8 of 8 for “"GaN LED"”.
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STUDY OF WURTZITE AND ZINCBLENDE GAN BASED GREEN LED HETEROSTRUCTURE
… the efficiency of green light emitting diodes (LEDs). The work presented focusses on the characterisation of conventional wurtzite (wz)-GaN based LEDs and novel zincblende (zb)-GaN based LEDs. The investigated wz-GaN based multiple quantum well structures have been found in other studies to have …
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The Effect of Polarization and InGaN Quantum Well Shape in Multiple Quantum Well Light Emitting Diode Heterostructures
<p>Previous research in InGaN/GaN light emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs …
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Characterization and device applications of II-VI nanocomposites
… polymers are considered and the emission of a GaN LED/ QD-containing polymer composite structure is simulated and compared with the output of actual devices. The simulation is also used as a design tool in the production of a white-light LED. Embedding the QDs into ZnS films via an electrospray …
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Commercialization of gallium nitride nanorod arrays on silicon for solid-state lighting
… a replacement. Currently, state-of-the-art white LEDs are made up of thin films of GaN and InGaN grown on sapphire substrates. A new LED structure design is proposed, in which GaN nanorod arrays are grown on silicon substrates. This new structure could be fabricated using anodized aluminum oxide's …
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A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition
… occurs in III-Nitrides Light Emitting Diodes (LEDs) when driven at high injection current densities. The efficiency droop refers to a decrease of the LED light emission efficiency when increases the current density from low values ~10 A/cm2 to higher values >100A/cm2. Many scientific papers …
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Micro- and nano-soft lithography for the fabrication of photonic devices
… respectively, have been used to pattern organic molecules, photoresists, and conductive inks to create optically active structures and devices. A series of light emitting polymers (LEPs), blended with a photo-curable host system, have been integrated as colour converters with an array of …
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MOVPE and characterization of GaN-based structures on alternative substrates
III-V-compound semiconductors based on the AlInGaN material system offer high chemical and thermal stability and bandgaps between 0.8 eV and 6.2 eV. They are suited for high frequency and high power devices as well as for light emitting diodes, which currently cover the ultra violet to green …
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Full-band NEGF Modeling of Optoelectronic Devices
L'abstract è presente nell'allegato / the abstract is in the attachment