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Showing 1 to 6 of 6 for “"GaN HFET"”.
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AlGaN/GaN HFET with composite 'slow/fast' gate
<p>The remarkable properties of AlGaN/GaN heterojunction field effect transistors (HFET) include a record high-density two dimensional electron gas (2DEG) channel, high breakdown fields, temperature stability and chemical robustness. Radio Frequency (RF) switches based on such HFETs demonstrate …
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GaN heterojunction FET device Fabrication, Characterization and Modeling
… processing, and modeling technologies for GaN-based Heterojunction Field Effect Transistors (HFETs). The interest in investigating GaN HFETs is motivated by the advantageous material properties of nitride semiconductor such as large band gap, large breakdown voltage, and high saturation …
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Microcantilever Based Potentiometric Sensors For Harsh Environment Applications
… 2DGS of ~75 meV/ % change while volatile organic compounds like acetone, ammonia and methanol showed negative 2DGS of -110, -45 and -13 meV/ % respectively. Separate potentiometric experiments on 6H-SiC epilayers reveal that NO<sub>2</sub> is responsible for surface electron affinity change …
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Wide Bandwidth Control Electronics For Gan-Based Pebbs
… III-Nitride semiconductor materials (such as GaN) has been driven by the unique properties of these materials, such as high electron mobility, high saturation velocity, high sheet-carrier concentration at hetero-junction interfaces, high breakdown voltages, etc. These properties make the use …
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AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates
GaN-based HFETs demonstrate ubiquitous high power and high frequency performance and attract tremendous research efforts. Even though significant advances have been achieved, there still exist some critical issues needed to be investigated and solved. In particular, high defect densities due to …
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Third Order Nonlinearity In III-Nitride Microwave Switches
… Heterojunction Field Effect Transistor (HFET) microwave switches have demonstrated significant advantages over most other switch types including pin- diodes GaAs high electron mobility transistors (HEMT) and MEMS due to high breakdown, very low insertion loss, higher isolation, high …