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Showing 1 to 20 of 40 for “"GaN HEMT"”.
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Linearity Enhancement of High Power GaN HEMT Amplifier Circuits
Gallium Nitride (GaN) technology is capable of very high power levels but suffers from high non-linearity. With the advent of 5G technologies, high linearity is in greater demand due to complex modulation schemes and crowded RF (Radio Frequency) spectrum. Because of the non-linearity issue, GaN …
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Characterization and Failure Mode Analysis of Cascode GaN HEMT
Recent emerging gallium nitride (GaN) high electron mobility transistor (HEMT) is expected to be a promising candidate for high frequency power conversion techniques. Due to the advantages of the material, the GaN HEMT has a better figure of merit (FOM) compared to the state-of-the-art silicon (Si) …
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Degradation study of AIGaN/GaN HEMT through electro-thermo-mechanical calculations and thermo-reflectance measurements
During the last few years, AIGaN/GaN high electron mobility transistors (HEMTs) have been intensively studied for high frequency high power applications. In spite of this great interest, device reliability is still an important challenge for the wide deployment of AIGaN/GaN HEMT technology. To …
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Thermo-mechanical Analysis of a Custom PCB-DBC Hybrid Package for a (650 V, 150 A) e-GaN HEMT
… bandgap (WBG) materials like gallium nitride (GaN). With a larger bandgap, higher electron mobility, and higher electrical field strength than Si, GaN high electron mobility transistors (HEMTs) can have lower on-state losses and higher switching frequencies in a smaller package. This makes GaN …
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Surge-energy and Overvoltage Robustness of Cascode GaN Power Transistors
… can dissipate surge energy via avalanche, the GaN high-electron-mobility transistor (HEMT) has no avalanche capability and withstands surge energy by its overvoltage capability. However, a comprehensive study into the surge-energy robustness of the cascode GaN HEMT, a composite device made of a …
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Packaging of Enhancement-Mode Gallium Nitride High-Electron-Mobility Transistors for High Power Density Applications
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are favored for their smaller specific on-resistance, lower switching losses, and higher theoretical temperature limits as compared to traditional silicon (Si) power switches. They have the potential to dramatically increase the power …
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Fabrication and characterization of AIGaN/GaN HEMTs
… and Schottky contact using Pd/Au on AlGaN/GaN HEMT has been developed. A specific contact resistance of 1.08 x 10-7 W cm2 was achieved and an Schottky barrier height of 1.12eV was reached. Large dimension AlGaN/GaN HEMT devices with two different epilayer designs have been fabricated. A …
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Robustness and Stability of Gallium Nitride Transistors in Dynamic Power Switching
Wide-bandgap gallium nitride (GaN) high electron mobility transistors (HEMTs) are gaining increased adoption in applications like mobile electronics and data centers. Benefitting from the high channel mobility and the high breakdown field of GaN, GaN power HEMTs enable low specific on-resistance …
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Development of Compound Semiconductor FET and Integrated Low -Voltage RF MEMS Switch Technology for Reconfigurable MMIC Applications
… uses: the ion-implanted GaAs MESFET, the AlGaN/GaN HEMT, and the RF MEMS switch. The MESFET is a relatively mature technology that has proven to be a low-cost solution for many MMIC uses, and this work will describe enhancement- and depletion-mode 0.12-mum-gate device development with ft …
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Characterization and Application of Wide-Band-Gap Devices for High Frequency Power Conversion
… conversion. The switching performance of cascode GaN HEMT is studied at first. An accurate behavior-level simulation model is developed with comprehensive consideration of the impacts of parasitics. Then based on the simulation model, detailed loss breakdown and loss mechanism analysis are …
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Multi-Kilovolt Gallium Nitride Power Transistors
… silicon carbide (SiC) and gallium nitride (GaN). Benefitting from the wide bandgap, high electron mobility and good thermal conductivity of GaN, GaN-based power devices can achieve fast switching speed, high breakdown voltage, and small on-resistance. They have been deployed in numerous …
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Robustness of Gallium Nitride Power Devices
… work studies the robustness of Gallium Nitride (GaN) power device. The structures of many GaN power devices are fundamentally different from Si or Silicon Carbide (SiC) power devices, leading to numerous open questions on GaN power device robustness. Based on the device structure, this …
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Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics
… performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. One of the key challenges is to improve its high frequency characteristics. In this thesis, we …
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Gallium Nitride-Based HEMTs for Microwave Power and Noise: Physics and Application
AlGaN/GaN high electron mobility transistors (HEMTs) have shown promising high speed performance, both high microwave power and low microwave noise. In this dissertation, the millimeter-wave and microwave power performance and small signal and low noise microwave characteristics are investigated. …
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Gate Driver for Phase Leg of Parallel Enhancement-Mode Gallium-Nitride (GaN) Transistors
… rating and broader application, Gallium nitride (GaN) is a promising next-generation power switch. The current four GaN HEMTs in paralleled phase leg that can block 400 V and conduct 200 A current is very beneficial, thus making the protection method on a GaN phase leg an urgent topic. This thesis …
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High-Frequency Oriented Design of Gallium-Nitride (GaN) Based High Power Density Converters
… (WBG) devices, like gallium nitride (GaN) and silicon carbide (SiC) devices have proven to be a driving force of the development of the power conversion technology. Thanks to their distinct advantages over silicon (Si) devices including the faster switching speed and lower switching …
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Aluminum Gallium Nitride/gallium Nitride HEMTs for High-Power Applications: Transistor Design Issues and Process Development
… and transistor designs for high-performance AlGaN/GaN HEMTS required for high-power applications are presented. Three transistor designs under study are a gate-recessed HEMT, asymmetric HEMT with varying gate-drain spacing, and field-plate HEMT. Each transistor design offers a trade-off between …
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Broadband RF Power Amplifier Design Methodology Using Sequential Harmonic Characterization
… was designed and fabricated using a Cree GaN HEMT device that exhibits drain efficiency of 53% - 64% across 0.7 – 4.0 GHz corresponding to the fractional bandwidth of 140%.
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Thermally Hardened RF GaN HEMTs in Extreme Environments
… gas/oil drilling, among others. Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are especially well suited for high temperature electronic applications due to their low intrinsic carrier concentration and excellent electrical properties. Despite great progress in HT GaN …
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Substrate Impurity Incorporation Mitigation for Improved AlGaN/GaN-ON-Si RF Performance
… detrimental as it is capacitively coupled to the GaN HEMT 2DEG channel. Moreover, the presence of significant lattice mismatch and thermal mismatch between the AlN nucleation layer and Si leads to a very large threading dislocation density (TDD) within the AlN layer thereby creating a leakage …
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