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Showing 1 to 2 of 2 for “"GaN:Er"”.

  1. Materials characterization and transmission analysis in erbium-doped gallium nitride microresonator structures

    GaN:Er is an attractive material for room temperature 1.54 pm luminescence enhancement devices for use in telecommunications because it does not experience thermal quenching at room temperature like Si:Er and can be electronically pumped. GaN:Er layers grown by molecular beam epitaxy (MBE) on …

    mit Repository record for Materials characterization and transmission analysis in erbium-doped gallium nitride microresonator structures (opens in a new tab)

  2. Nanostructures for Coherent Light Sources and Photodetectors

    … metal-oxide-semiconductor (CMOS) technology. Persistent efforts continue to achieve efficient light emission as well as broadband photodetection from silicon in extending the silicon technology into fully integrated optoelectronic circuits. Recent breakthroughs, including the demonstration of …

    vt Repository record for Nanostructures for Coherent Light Sources and Photodetectors (opens in a new tab)