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Showing 1 to 1 of 1 for “"GaN, Threshold voltage instability, HEMTs"”.
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Investigation of Threshold Voltage Instability in Normally Off GaN on Si HEMT
… with a smaller form factor. Gallium Nitride (GaN) in particular, with its ability to form heterointerfaces naturally forms a high mobility 2-dimensional electron gas (2-DEG) at hetero interfaces like AlGaN/GaN making it an apt candidate for making power devices with lower on state resistance …