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Showing 1 to 1 of 1 for “"GaN, HEMT, Ohmic, Schottky, rf photomask, Simulation"”.
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Fabrication and characterization of AIGaN/GaN HEMTs
The processing procedure for the formation of ohmic contact using Ti/Al/Pd/Au, and Schottky contact using Pd/Au on AlGaN/GaN HEMT has been developed. A specific contact resistance of 1.08 x 10-7 W cm2 was achieved and an Schottky barrier height of 1.12eV was reached. Large dimension AlGaN/GaN HEMT …