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Showing 1 to 5 of 5 for “"GaInAsSb"”.
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Investigation of phase separation in GaInAsSb using transmission electron microscopy
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.
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Characterization of OMVPE-grown GaSb-based epilayers using in situ reflectance and ex situ TEM
… thesis was to investigate and characterize GaSb, GaInAsSb, and AlGaAsSb epilayers grown by organometallic vapor phase epitaxy (OMVPE). These epilayers were principally characterized using in situ spectral reflectance and ex situ transmission electron microscopy (TEM). An in situ spectral (380-1100 …
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DESIGN, FABRICATION AND CHARACTERIZATION OF EPITAXIAL AND NON-EPITAXIAL THERMO-PHOTOVOLTAIC CELLS
… materials with the bandgap energies of 0.51 eV (GaInAsSb quaternary) to 0.72 eV (GaSb binary) that are correspond to commonly available heat sources. The quaternary alloys are grown epitaxially while the binary GaSb devices can be realized through non-epitaxial techniques. In this work, we have …
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Towards a high-efficiency micro-thermophotovoltaic generator
… MEMS microreactor integrated with low-bandgap GaInAsSb (0.53 eV bandgap) photovoltaic cells to create a fully operational millimeter scale TPV system. The initial fuel to electricity system efficiency was measured at 0.8%. A cell area of 2 cm2 produced 200 mW of electricity from a chemical …
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Infrarot-Diodenlaser auf der Basis der III-V-Antimonide
Die Arbeit beschäftigt sich mit Halbleiter-Diodenlasern im Wellenlängenbereich zwischen 1.8µm und 2.4µm, die mit Hilfe der Molekularstrahlepitaxie in dem bisher wenig untersuchten (AlGaIn)(AsSb)-Materialsystem realisiert wurden. Durch die Untersuchung der elektrischen, optischen und thermischen …