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Showing 1 to 2 of 2 for “"GaInAsP"”.

  1. (GaIn)(AsP)- und (GaIn)(AsN)-Halbleiterheterostrukturen und ihre Anwendung in Diodenlasern

    … von langwelligen (> 2 µm) InP-basierenden GaInAsP- und GaInAsN-Halbleiterheterostrukturen und ihre Anwendung in Diodenlasern wird beschrieben. <br>Zur Herstellung der Strukturen kamen die Metall-Organische Gasphasenepitaxie und die Molekularstrahlepitaxie zum Einsatz. Anhand von …

    freiburg-diss Repository record for (GaIn)(AsP)- und (GaIn)(AsN)-Halbleiterheterostrukturen und ihre Anwendung in Diodenlasern (opens in a new tab)

  2. Design and Fabrication of Long -Wavelength Vertical -Cavity Surface -Emitting Lasers Using Wafer Bonding Technologies

    … lasers (VCSELs) emitting at 1.55 mum from GaInAsP/InP heterostructures are important optical sources for high-speed fiber-optic commutations. However, their development has been obstructed by the material disadvantages associated with the GaInAsP/InP distributed Bragg reflector (DBR) and …

    uiuc Repository record for Design and Fabrication of Long -Wavelength Vertical -Cavity Surface -Emitting Lasers Using Wafer Bonding Technologies (opens in a new tab)