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Showing 1 to 3 of 3 for “"GaInAsN"”.

  1. (GaIn)(AsP)- und (GaIn)(AsN)-Halbleiterheterostrukturen und ihre Anwendung in Diodenlasern

    … (> 2 µm) InP-basierenden GaInAsP- und GaInAsN-Halbleiterheterostrukturen und ihre Anwendung in Diodenlasern wird beschrieben. <br>Zur Herstellung der Strukturen kamen die Metall-Organische Gasphasenepitaxie und die Molekularstrahlepitaxie zum Einsatz. Anhand von Wachstumsstudien wurde …

    freiburg-diss Repository record for (GaIn)(AsP)- und (GaIn)(AsN)-Halbleiterheterostrukturen und ihre Anwendung in Diodenlasern (opens in a new tab)

  2. Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga,In)(As,N)

    … a study of the growth and characterization of GaInAsN quantum dot nanostructures allows to demonstrate an unquestionable dependence of the N incorporation into these nanostructures on the Ga content by means of four different methods, such as, a morphological analysis, an optical analysis, a …

    upm Repository record for Desarrollo de dispositivos optoelectrónicos mediante crecimiento por MBE y caracterización de nanoestructuras de punto cuántico basadas en (Ga,In)(As,N) (opens in a new tab)

  3. Quantum wells on indium gallium arsenic compositionally graded buffers realized by molecular beam epitaxy

    … communication applications. Using dilute nitride GaInAsN QWs or InAs quantum dots, emission wavelengths have successfully been extended to 1.3 m, but significant difficulties have been met going beyond 1.3 m. In this thesis, we present an alternative approach, namely, the molecular beam epitaxy …

    mit Repository record for Quantum wells on indium gallium arsenic compositionally graded buffers realized by molecular beam epitaxy (opens in a new tab)