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Showing 1 to 13 of 13 for “"GaAsSb"”.
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InGaAs/GaAsSb type-Il heterojunction vertical tunnel-FETs
… In this thesis, vertical TFETs based on InGaAs/GaAsSb heterostructure are investigated in terms of design, fabrication and electrical characterization. Ino.53Gao.47As/ GaAso.5Sb0.5 heterostructure vertical TFETs are fabricated with an airbridge structure, designed to prevent parasitic tunneling …
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InGaAs/GaAsSb quantum-well Tunnel-FETs for ultra-low power applications
… fabricated and analyzed based on InGaAs/GaAsSb material. Using ultrathin InGaAs/GaAsSb quantum-well (QW), the device fabrication technology was developed and the tunneling properties of two successive generations of QWTFETs were investigated. In the first generation QWTFETs, the …
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High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications
… bipolar transistor (DHBT), and Type-II GaAsSb/InP DHBT. Among these three types of InP HBTs, Type-II GaAsSb/InP DHBT has the most favorable band alignment; thus it has many superiorities compared with other InP HBT technologies. The subject of this work is the design, fabrication, and …
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Molecular Beam Epitaxy of Gallium Arsenide Antimonide-Based Ultra-High-Speed Double Heterojunction Bipolar Transistors and Light Emitting Transistors
In this work, GaAsSb-based double heterojunction bipolar transistors (DHBTs) and light emitting transistors (LETs) are grown using gas source molecular beam epitaxy (GSMBE). High-speed GaAs0.5Sb0.5/InP DHBTs are developed through the exercise of GSMBE growth optimization, device fabrication, and …
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Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy
… the emitter-base junction of ultra-fast type-II GaAsSb-based HBTs in order to eliminate the carrier blocking and enhance the current gain. InAlP was used to replace the InP emitter and form a type-I emitter-base junction. Results for large devices show that this modification could improve DC …
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Interband quantum tunneling at the band-edges in III-V semiconductor heterojunctions for low-power logic and detectors
… both type-II and type-III band alignment InGaAs/GaAsSb heterojunctions, it is identified that point defects gettered by dislocations at the interface as well as uneven distributions of point defects and composition can lead to both interfacial energy states and nonuiform band-alignment across the …
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Design, Fabrication, and Modeling of Indium Phosphide Double-Heterojunction Bipolar Transistors With Sub-Millimeter Wave Cutoff Frequency
… voltage greater than 3 V by using the InP/GaAsSb material system with a type-II energy band alignment. Chapter 1 of this work gives an overview of the relevant materials and device parameters. Material structure design and vertical scaling are discussed in Chapter 2. In Chapter 3, lateral …
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Transmission electron microscopy analysis of novel iii-v nanostructures with sb and bi for optoelectronic applications
… and low exciton binding energy. In particular, GaAsSb superlattices and the incorporation of Bi into InAs quantum dots are proposed as promising nanostructures for the development of advanced photonic and optoelectronic devices. With respect to antimonides, the third chapter explores the …
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Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications
… to improve gain and speed by using the AlInP/GaAsSb/InP material system with a Type-I/II energy band alignment. Chapter 1 of this work gives a brief overview of the motivation to conduct this research and an introduction to other relevant work. Scaling theory, structure design and previous …
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Enhancing the Light output of Solid State Emitters
… QRs) or the C-band (InAs/GaAs QDs capped with GaAsSb). Individual exciton emission at low temperature was observed in these samples using micro-photoluminescence for what we believe is the first time. This was achieved by reducing the excitation area of the sample using micropillars and gold …
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Characterization of novel sb-nanostructures by transmission electron microscopy techniques for high efficient solar cells
… GaAs substrates. In the first chapter, type-I (GaAsSbN/GaAs) and type-II (GaAsSb/GaAsN) SL structures were evaluated in terms of compositional homogeneity and uniformity. A new methodology for determining N distribution is proposed based in the suitable normalization and separation of intensity …
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Development of electrical and optical devices for next generation high-speed optical interconnects
… study of emitter-ledge effects in sub-micron InP/GaAsSb Type-II DHBTs, showing a 160-nm ledge can more than double DC current gain β by suppressing surface recombination, but with trade-offs in ideality factor, yield, base resistance, and fT/fmax. Together, these results provide the process …
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GaAs-based quantum well and quantum dot light-emitting diodes and lasers for 1.3 and 1.55 um emission
… de InAs cubiertos con capas de GalnNAs o GaAsSb. Dispositivos basados en pozos cuánticos de GalnNAs/GaAs. El primer bloque de la tesis está dedicado a los dispositivos basados en pozos cuánticos de GalnNAs/GaAs. Es bien sabido que la incorporación de una pequeña fracción molar de N en un …