Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 42 for “"GaAs substrates"”.
-
Pulsed laser annealing and characterization of GaAs substrates
Call number: LD2668 .T4 EECE 1989 S55
-
Pulsed laser annealing and characterization of GaAs substrates
Call number: LD2668 .T4 EECE 1989 S55
-
Monolithic Integration of Long Wavelength Photodetectors and High Electron Mobility Transistors on Metamorphic Gallium Arsenide Substrates
… ternary materials are lattice matched to InP substrates. However, the several practical shortcomings of InP substrates such as mechanical fragility, high substrate cost, and small wafer size motivated the development of metamorphic devices on GaAs substrates. In this dissertation, high speed …
-
Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.
… reflectors (DBRs), grown latticematched on GaSb substrates. In this work the ability to grow such antimonide VECSEL structures on GaAs substrates is explored. The growth of such III-Sb VECSELs on GaAs substrates is non-trivial due to the 7.78% lattice mismatch between the antimonide based active …
-
Heterostructurally Integrated Iii-V Semiconductors Fabricated by Wafer Bonding Technology
… technology to fabricate GaSb semiconductor on GaAs substrates to potentially create GaSb-on-insulator structure has been demonstrated.
-
A Comparative Study of Indium Arsenide/gallium Arsenide Short-Period Superlattice and Alloy Quantum Well Structures on Gallium Arsenide Substrates
A comparison between (InAs)$\sb1$/(GaAs)$\sb1$ short-period-superlattice (SPS) and $\rm In\sb{0.5}Ga\sb{0.5}As$ alloy quantum-well structures grown on GaAs substrates has been made. Structural properties, photoluminescence properties, and thermal stability were investigated. A 1.265-$\mu$n …
-
Mechanisms of Gallium-Arsenide Crystal Growth and Doping by Sputter Deposition: The Role of Ion-Surface Interactions
GaAs films were grown on (100) GaAs substrates using a modified sputter deposition technique. Structural, chemical, and electrical analysis of the as-deposited films indicated that they were high quality, stoichiometric single crystals. Ion bombardment played an important and sometimes dominant …
-
An Analysis of Traveling - Wave Mixer Structures (Signal Processing)
… components to be monolithically realized on GaAs substrates. The models are compared to the measured results, and excellent agreement is obtained. This model accurately predicts the transfer functions of convolver devices employing time sampled delay lines.
-
Electrooptic mach-zehnder modulators in gallium arsenide
… Modulators fabricated on semiconductor substrates, such as GaAs and InP, are particularly attractive in that there exists the possibility of monolithic integration of these devices with other optoelectronic components. The bandwidths of this type of modulator are limited by the velocity …
-
Magnetotransport in low dimensional semiconductor structures
… two-dimensional electron gases formed on (311)B GaAs substrates. The second is a study of magnetic field induced insulator-quantum Hall liquid transitions performed on GaAs-AIGaAs heterostructures in which a number of InAs monolayers are inserted in the centre of a GaAs quantum well. The sample …
-
Crystal Growth, Phase Transformations, and Electrical Properties of Metastable Gallium Antimonide-Germanium Alloys
… (GaSb)(,1-x)Ge(,x) alloys have been grown on GaAs substrates with compositions across the GaSb-Ge pseudobinary phase diagram. The alloys transformed to the equilibrium state through a continuous series of metastable states at a rate limited by diffusion. Ion bombardment during growth had a …
-
Electronic transport and structure of a surface quantum well
… structural study of antimonide buffer layers on GaAs substrates was performed. Using in situ diffraction and ex situ microscopy, we examine the lattice transition between GaAs substrates, and the highly mismatched material GaSb. When GaSb grows on GaAs, it follows a complex Stranski-Krastanov 2D …
-
Dislocation engineering in InAlGaAs/SiGe alloy systems for heteroepitaxial integration
Semiconductor devices based on GaAs substrates use III-V alloy systems like Inx(AlyGa₁₋y)₁₋xAs for optoelectronic devices and high frequency communication applications. Heteroepitaxial integration of such devices with Si has generated a lot of interest because it has the potential of combining the …
-
Semiconductor quantum dot lasers.
… InAlAs were grown by molecular beam epitaxy on GaAs substrates. Carriers injected electrically from the doped regions of separate confinement heterostructures thermalized efficiently into the zero-dimensional QD states, and stimulated emission at $\sim$707 nm is observed at 77 Kelvin with a …
-
Molecular beam epitaxial growth and characterization of indium antimonide on gallium arsenide
… epitaxial growth and characterization of InSb on GaAs substrates. The growth conditions and mechanisms of this highly lattice-mismatched system are detailed. Structural, electrical, and optical properties of the InSb epilayers are characterized by transmission electron microscopy (TEM), X-ray …
-
Wafer bonding for monolithic integration of Si CMOS VLSI electronics with III-V optoelectronic devices
GaAs-on-silicon epitaxy techniques as well as wafer bonding GaAs to Si, have been developed to overcome lattice mismatch in order to integrate optoelectronic and Si devices. However, the thermal expansion differences between these materials continues to be a limitation in using either of these …
-
Mid-infrared antimonide based type II quantum dot lasers for use in gas sensing
… beam epitaxy (MBE) growth of the QDs on GaAs and InP substrates can largely cut down the costs for future devices and massively broaden its application possibilities using the more mature material platforms. Different metamorphic growth techniques including inter-facial misfit (IMF) …
-
Properties and Applications of Amorphous Gallium Arsenide Annealed to a Polycrystalline Form
GaAs can be grown by Molecular Beam Epitaxy (MBE) in an amorphous form by lowering the growth temperature well below normal growth conditions. These growth conditions result in material that is very arsenic rich. When this material is annealed at moderate temperatures (400 to 500°C) it becomes …
-
Silver (Ag) nanoparticle based masks for the development of antireflection subwavelength structures in GaAs and Si solar cells
… using dry and isotropic etching of semiconductor substrates. Silver (Ag) thin films of different thicknesses are deposited on Silicon (Si) and Gallium Arsenide (GaAs) semiconductor substrates and annealed at different temperatures. Uniform nanoparticles with diameters around 200nm and spacing …
-
Ultrathin films on semiconductor substrates : growth, magneto-optical characteristics and spin injection
… ultrathin films were grown on different GaAs substrates using an e-beamevaporation technique. The MBE system which is used to fabricate and analyseultrathin films is home designed and assembled. The design strategy and capabilitiesof this system in surface science studies are described in …
Page 1 of 3