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Showing 1 to 11 of 11 for “"GaAs InGaAs"”.
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Reliability and Mode Behavior of AlGaAs-GaAs-InGaAs Quantum Well Heterostructure Lasers
"Data are presented on oxide-confined AlxGa1_xAs-GaAs quantum well heterostructures with oxide-AlxGa1_xAs distributed Bragg reflectors for electromagnetic confinement, showing the full range of reliability after 5+ years of hydrolyzation in ambient conditions of atmospheric water vapor and …
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Crecimiento por MBE, fabricación y caracterización de láseres de AlGaAs/GaAs/InGaAs/GaAs (111B) para emisión óptica menor a 1 nanometro
… de Haces Moleculares (MBE) de estructuras de AlGaAS/GaAS/InGaAS de baja dimensionalidad sobre substratos de GaAs (111)B con vistas a su aplicación en el desarrollo de dispositivos optoelectrónicos de configuración guía-onda conlongitudes de onda de trabajo mayores a 1 um, con especial atención a …
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Coupled Quantum Well to Quantum Dot Heterostructure Laser
… advantageous to locate strain-matching auxiliary InGaAs layers QWs within tunneling distance of a single QD layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. (Abstract shortened by UMI.).
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Tunnel Contact Junction Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum-Well Heterostructure Lasers and Light Emitters With Native-Oxide-Defined Lateral Currents
Data are presented on AlGaAs-GaAs-InGaAs native-oxide-defined quantum well heterostructures utilizing a tunnel contact junction including edge-emitting lasers, vertical cavity surface emitting lasers, and resonant cavity light emitting diodes. These devices display improved electrical …
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Carbon doping and hydrogen passivation in indium gallium arsenide and indium phosphide/indium gallium arsenide heterojunction bipolar transistors grown by metalorganic chemical vapor deposition
… stable p-type doping profiles in MOCVD-grown GaAs has made MOCVD the preferred technique for production of highly reliable GaAs-based HBT structures. In the InP/InGaAs materials system, however, inefficient C incorporation and amphoteric behavior have previously prevented the use of C as an …
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Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers
… (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The …
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Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide-Indium Arsenide Quantum Dot Coupled to Quantum Well Heterostructure Lasers by Low-Pressure Metalorganic Chemical Vapor Deposition
… advantageous to locate strain-matching auxiliary InGaAs layers [quantum wells (QWs)] within tunneling distance of a single-quantum-dot (QD) layer of an AlGaAs-GaAs-InGaAs-InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed …
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Mode-locked surface emitting semiconductor lasers
… 20 mW from a mode-locked VECSEL which contains InGaAs quantum wells and an LT-GaAs/InGaAs emitter/receiver antenna in a Terahertz Time Domain Spectrometer (THz-TDS) setup. The first mode locked OP-VECSEL at 830 rim is reported here. The combination of a GaAs quantum well-based gain sample and …
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Gate current modeling of tunneling real-space transfer transistor with negative differential resistance
… (TRSTT). The device was fabricated on a GaAs (100) substrate with a GaAs/InGaAs/GaAs straddling heterostructure. According to the experimental data reported by Yu et al. in 2010 [1], they demonstrate an InGaAs and \delta-doped GaAs dual-channel TRSTT device with an \lambda-type NDR in a …
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The Influence of Contact Transparency on the Superconducting Proximity Effect in Thin Semiconducting Films
… junctions between niobium and heavily doped n-GaAs and n-InAs were fabricated via molecular beam epitaxy. In order to reduce the Schottky barrier, a graded and delta-doped InGaAs cap was inserted at the interface. Careful construction of the doping profile in the cap allows for extremely …
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2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures
The MBE growth of high-quality GaAs/AlGaAs epilayer structures has enabled the study of novel physical phenomena, such as the Quantum Hall and Fractional Quantum Hall in a 2D electron system (2DES), 1D transport, and single-electron transport in 0D systems. The wide range of systems that can be …