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Showing 1 to 5 of 5 for “"GaAs HBT."”.

  1. 1-Gs/s, 14-Bit Digital -to -Analog Converter and Track -and -Hold Amplifier

    Seo, DongwonUniversity of Illinois at Urbana-Champaign2015

    … was also designed using a 60-GHz fT InGaP/GaAs HBT technology. Simulation results are 83-dB SFDR at 100-MHz sampling frequency, 65-dB SFDR at 1-GHz sampling frequency, and 60-dB SFDR at 2-GHz sampling frequency under all Nyquist conditions.

    uiuc Repository record

  2. Three -Port Modulation of Indium Gallium Phosphide/gallium Arsenide Transistor Lasers

    Chan, Richard T.University of Illinois at Urbana-Champaign2015

    … (quasi-continuous, ∼200 K) of an InGaP/GaAs/InGaAs HBLET with AlGaAs confining layers and an InGaAs recombination QW incorporated in the p-type base region. Furthermore, the microwave operation and modulation (3 GHz) of an InGaP/GaAs HBT laser is reported using a 450-mum long cavity. The …

    uiuc Repository record

  3. Zero-field time-of-flight characterization of minority carrier transport in heavily carbon-doped gallium arsenide and indium gallium arsenide

    Colomb, Carolyn MarieUniversity of Illinois at Urbana-Champaign2011

    Heavily doped p-type GaAs is important for both optical and electronic devices, and recently carbon has become the preferred base dopant for AlGaAs/GaAs and InGaP/GaAs heterojunction bipolar transistors (HBTs) due to its high solubility and low diffusivity in GaAs. The low diffusivity of carbon, …

    uiuc Repository record

  4. A Linear RF Power Amplifier with High Efficiency for Wireless Handsets

    Refai, Wael YahiaVirginia Tech2014

    … the first implementation of class-J using GaAs HBT in a handset power amplifier. The research investigates the linearity, and the nature and causes of nonlinearities. Multiple concepts for improving the linearity are presented, such as avoiding odd-degree harmonics, and linearizing the …

    vt Repository record

  5. Zuverlässigkeitsuntersuchung von GaAs Heteroübergang-Bipolartransistoren

    Pazirandeh, Reza2010

    … wurde die Zuverlässigkeit von Hochfrequenz-GaAs-Heteroübergang-Bipolartransistoren (HBTs), die am Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH) für Anwendungen mit hohen Zuverlässigkeitsanforderungen (Mobilfunk, Weltraum) hergestellt wurden, untersucht. Die …

    tu-berlin Repository record