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Showing 1 to 3 of 3 for “"GaAs:C"”.
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Optical studies of GaAs:C grown at low temperature and of localized vibrations in normal GaAs:C
Optical studies of heavily-doped GaAs:C grown at low temperature by molecular beam epitaxy were performed using room-temperature photoluminescence, infrared transmission, and Raman scattering measurements. The photoluminescence experiments show that in LT-GaAs:C films grown at temperatures below …
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Optical studies of highly-doped GaAs:C
… cm⁻¹) were carried out on heavily-doped GaAs:C films grown by molecular beam epitaxy. With increasing carbon concentration, a broad reflectivity minimum develops in the 1000-3000 cm⁻¹ region and the one-phonon band near 270 cm⁻¹ rides on a progressively increasing high-reflectivity …
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Molekularstrahlepitaxie und Charakterisierung von (Ga,Mn)As Halbleiterschichten
… der Elektronik wird bereits der III-V Halbleiter GaAs eingesetzt und ferromagnetisches (Ga,Mn)As könnte in die vorhandenen optischen und elektronischen Bauteile integriert werden. Deshalb ist eine intensive Erforschung der kristallinen Qualität, der elektrischen und magnetischen Eigenschaften von …