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Showing 1 to 20 of 73 for “"GaAs/AlGaAs"”.
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GaAs/AlGaAs mid-infrared quantum cascade laser
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1998.
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GaAs/AlGaAs far-infrared quantum cascade laser
… subband farinfrared (40-100[mu]m) laser, using GaAs/ AlxGal-xAs heterostructures. The proposed design aims to use LO-phonon-mediated depopulation of the lower THz laser level to aid the intersubband laser population inversion. Interband recombination occurs by means of stimulated emission, thus …
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Thermal management in GaAs/AlGaAs laser diode structures
[ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI-COLUMBIA AT AUTHOR'S REQUEST.] Due to the advancement of nanotechnology, understanding the heat transport mechanism in nano-scale devices has become a crucial factor in describing the operation of the device. Laser diode structures have been the …
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Hydrodynamic and ballistic transport in high-mobility GaAs/AlGaAs heterostructures
… two-dimensional electron system in a GaAs quantum well in a GaAs/AlGaAs heterostructure. The hydrodynamic regime exhibits collective fluid-like behavior of electrons which leads to the formation of current vortices, attributable to the dominance of electron-electron interactions in …
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Compact spectroscopic terahertz imaging solutions using GaAs/AlGaAs and InGaAs semiconductor nanostructures /
… and detectors. THz source based on p-i-n-i -type GaAs/AlGaAs heterostructure was experimentally investigated for the first time. It is demonstrated that under certain excitation conditions by femtosecond optical pulses the emitter delivers more power than InGaAs and InAs surface emitters. As …
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Desarrollo de fotodetectores bi-color de infrarrojos con pozos cuánticos de GaAs/AlGaAs
… pm y de 8 a 12 pm sobre el sistema de materiales GaAs/AlGaAs. Esta Tecnología incluye todas las fases, desde el diseño, pasando por el crecimiento epitaxial y la fabricación, hasta la caracterización. El diseño de los detectores se lleva a cabo mediante el uso de herramientas de simulación que …
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SAW-driven single-photon sources and photon detectors fabricated on an undoped GaAs/AlGaAs quantum well
… electrons and holes can be induced in an undoped GaAs/AlGaAs 15nm quantum well by gates to form a lateral n-i-p junction. The junction is confined into a quasi-1D channel laterally by etching and side gates. Light emission is observed when a 1 or 3 GHz SAW drives a current, by pumping electrons …
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Design, growth and optimization of 2-μm InGaSb/AlGaSb quantum well based VECSELs on GaAs/AlGaAs DBRs.
… to grow such antimonide VECSEL structures on GaAs substrates is explored. The growth of such III-Sb VECSELs on GaAs substrates is non-trivial due to the 7.78% lattice mismatch between the antimonide based active region and the GaAs/AlGaAs DBR. The challenge is therefore to reduce the threading …
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Growth of low disorder GaAs/AlGaAs heterostructures by molecular beam epitaxy for the study of correlated electron phases in two dimensions
<p>The unparalleled quality of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy has enabled a wide range of experiments probing interaction effects in two-dimensional electron and hole gases. This dissertation presents work aimed at further understanding the key material-related issues …
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Use of time domain capacitance spectroscopy in the study of tunneling into two-dimensional GaAs/AlGaAs heterostructures with an in-plane magnetic field
Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2003.
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Deep-Level Transient Spectroscopy Studies of Gallium Arsenide - Aluminum Gallium Arsenide Heterostructures and Superlattices
… measure conduction band-edge discontinuities in GaAs - AlGaAs quantum-well heterostructures is evaluated theoretically and experimentally. Second, defects in GaAs - AlGaAs superlattices are examined using DLTS.
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Optical properties of gallium arsenide and indium gallium arsenide quantum wells and their applications to optoelectronic devices
… the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the …
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Distributed Feedback Ridge Waveguide and Step-Graded Separate Confinement Quantum Well Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition
… in both lattice-matched systems such as the GaAs-AlGaAs heterostructure, and strained-layer material systems such as the InGaAs-GaAs-AlGaAs structure. Topics involving these material systems grown by atmospheric-pressure MOCVD, the device physics of step-graded separate confinement quantum …
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Excitonic optical nonlinearities in semiconductors and semiconductor microstructures.
… studies of molecular-beam-epitaxially-grown bulk GaAs and ZnSe, GaAs/AlGaAs multiple-Quantum-Wells (MQW's), and finally, quantum-confined CdSe-doped glasses. The microscopic origins and magnitudes of the optical nonlinearities of bulk GaAs and ZnSe were investigated and the exciton recovery time …
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Theory of the optical properties of III-V semiconductor quantum wells
… quantum wells, specifically those based on the GaAs-AlGaAs system. Both the linear and non-linear optical properties of these systems are considered. A theoretical model for the refractive index in GaAs-AlGaAs quantum well structures for optical frequencies close in energy to the fundamental …
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Optical properties of GaAs coupled quantum wells and superlattices: electric and magnetic field effects
… optical transmission and reflection spectra of GaAs/ AlGaAs coupled quantum wells and superlattices are investigated and their potential application in optical modulation demonstrated. Quenching and enhancement of excitonic absorption peaks is achieved at low bias fields of the order of 10 -60 …
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