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Showing 1 to 1 of 1 for “"Fluctuations in noise"”.

  1. Characterization and modeling of low-frequency noise in Hf-based high -kappa dielectrics for future cmos applications

    The International Technology Roadmap for Semiconductors outlines the need for high-K dielectric based gate-oxide Metal Oxide Semiconductor Field Effect Transistors for sub-45 nm technology nodes. Gate oxides of hafnium seem to be the nearest and best alternative for silicon dioxide, when material, …

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