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Showing 1 to 6 of 6 for “"Flat band voltage"”.
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Characterization of organic field effect transistors for OLED displays
… of OLED pixel drivers. The contact resistance, flat band voltage, and mobility are extracted from top contact and bottom contact transistors with current-voltage (I-V) and low frequency capacitance-voltage (C-V) measurements. Extraction of contact resistance is found to be crucial in …
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Stability of polarization in organic ferroelectric metal-insulator-semiconductor structures
… was further investigated with capacitance-voltage (C-V) measurements. When the structure was driven into depletion, C-V plots showed a positive flat-band voltage shift, arising from the change in polarization state of the ferroelectric insulator. When biased into accumulation, the …
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Reliability study of Zr and Al incorporated hf based high-k dielectric deposited by advanced processing
… gate leakage current, good control on threshold voltage, lower interface state density, and good reliability. In order to overcome these challenges, improvements of the high-x film properties and deposition methods are highly desirable. In this dissertation, a detail study of Zr and Al …
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Study of Si/SiO2 interface passivation and SiO2 reliability on deuterium implanted silicon
… to the interface states in the silicon band gap is the dangling bond, which degrades performance of MOS devices. Passivation of these bonds with hydrogen had been found to diminish their effect but the improvement degrades the operation due to hot electron effect. Passivation with …
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… experimentally observed in the context of MOS band diagram for the first time in Hf-silicate gate stacks from low temperature and leakage measurements. Excellent match between experimental and calculated defect levels shows that bulk O vacancies are probably responsible for electron trapping at …
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Plasma induced damage to Si and SiGe devices and materials
… Electrical characterizations by C-V, ramped voltage breakdown (RVB) and deep-level transient spectroscopy (DLTS) measurement, and x-ray photoelectron spectroscopy (XPS) analysis were employed to investigate the damages to thin gate oxides and Si/SiO_2 interface. The shift of flat band …