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Showing 1 to 1 of 1 for “"Fixed oxide charge"”.

  1. Development of inversion-mode and junctionless Indium-Gallium-Arsenide MOSFETs

    … and junctionless Al2O3/In0.53Ga0.47As metal-oxidesemiconductor field-effect transistors (MOSFETs). An implant activation anneal was developed for the formation of the source and drain (S/D) of the inversionmode MOSFET. Fabricated inversion-mode devices were used as test vehicles to …

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