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Showing 1 to 3 of 3 for “"Fin field effect transistor (finFET)"”.

  1. Study of subthreshold behavior of FinFet

    … behavior of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is critically important in the case of submicron devices for the successful design and implementation of digital circuits. Fin Field Effect Transistor (FinFET) is considered to be an alternate MOSFET structure in the …

    unlv Repository record for Study of subthreshold behavior of FinFet (opens in a new tab)

  2. Etching of Silicon, Silicon Nitride, and Atomic Layer Etching of Silicon Dioxide using Inductively Coupled Plasma Beams

    … nitride (SiN) over Si or SiO2 is vital for fin field-effect transistor (FinFET) fabrication. Anisotropic etching with high selectivity of SiN over Si, and moderate selectivity over SiO2, can be achieved by ion-assisted etching using hydrofluorocarbon gases, such as CH3F, often with addition …

    houston Repository record for Etching of Silicon, Silicon Nitride, and Atomic Layer Etching of Silicon Dioxide using Inductively Coupled Plasma Beams (opens in a new tab)

  3. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels

    This dissertation research effort explores new transistor topologies using three-dimensional nanowire (NW)-array channels formed by both bottom-up and top-down synthesis. The bottom-up NW research centers on the Au-catalyzed planar GaAs NW assembly discovered at the University of Illinois …

    uiuc Repository record for Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels (opens in a new tab)