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Showing 1 to 20 of 151 for “"Film Growth"”.
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Electrochemical Thin Film Growth Assisted by Pb Monolayer
The properties of heteroepitaxial thin films are very much dependent on the method used for their deposition. The electrochemical/electroless deposition represents the ambient temperature growth process for many heteroepitaxial metal overlayers while preserving the integrity of their interface. …
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Studies of diamond film growth using atom beam sources
… reactor has been designed to investigate diamond growth by varying the ratio of carbon:hydrogen incident on both silicon and diamond substrates. A well characterised<br/>atomic hydrogen source developed in this laboratory is positioned at right angles to a carbon sputter source, which has been …
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X -Ray Studies of Metal Thin Film Growth on Semiconductors
… for an investigation of the structure of Ag films deposited in situ on Ge(111) over the thickness range of 3--15 monolayers. The films deposited at a substrate temperature of 110 K are not well ordered, but become well ordered upon annealing, as evidenced by substantial changes in the x-ray …
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Photolytic Laser-Induced Chemical Vapor Deposition for Aluminum Film Growth
… emission measurements. Position-resolved growth rate measurements were used to investigate film growth kinetics during photolysis of TMA using 248 nm light, and deposited films were analyzed using in-situ Auger electron spectroscopy (AES), secondary ion mass spectrometry (SIMS), x-ray …
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X-ray studies of metal thin film growth on semiconductors
… on Si(111)-(7 × 7) at 180 K reveal an unusual growth behavior. A wetting layer forms first to cover the entire surface. Then islands of a fairly uniform height of about five monolayers form on top of the wetting layer and grow to fill the surface. The growth then switches to a layer-by-layer …
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Mechanisms for intrinsic stress evolution during and after polycrystalline film growth
Growth of polycrystalline films involves poorly understood kinetic processes that occur far from equilibrium and lead to complex co-evolution of the surface, microstructure and intrinsic stress of the films. Here we present a comprehensive study consisting of in situ stress measurements, …
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Characterization of a novel methyl radical source and related thin film growth studies
… a mass spectrometer or used in nucleation and growth experiments.;The characterization studies showed that a "clean" flux of CH3 radicals was produced for a 7.5% CH4 mixture, a source pressure of 200 mT and a residence time of ∼60 ms. The flux of CH3 radicals in this case was 3.3 x 1014 cm …
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Mechanisms for Orientation in Low Energy Ion Beam Assisted TiAlN Thin Film Growth
… of off-normal sputter deposited TiAlN thin films has been investigated with the goal of better understanding the mechanistic pathways in ion beam assisted thin film growth for better control of film properties during deposition. The effects of incident angle for ion bombardment has been …
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Fundamental study of nucleation and heteroepitaxial thin film growth using ionized source beam
… indicate that the two dimensional cluster growth would be favored by the enhanced coalescence if the neutral clusters are ionized during deposition.
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Role of low-energy ion/surface interactions in controlling microstructure and texture evolution during film growth
… microchemistry of ion irradiation during AlCu film growth on a-SiO$\sb2$ by two directional sputtering techniques--collimated magnetron sputter deposition (CMSD) and ionized magnetron sputter deposition (IMSD)--were investigated. Both sets of films have dense columnar microstructures with (111) …
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Understanding the origins of metastability in thin film growth; tantalum and the early group VB-VIB metals
… industry, where it is largely used in thin film modifications in order to achieve various electronic, magnetic and structural capabilities in solid-state devices. Ta frequently forms metastable phases, including the well-known ss-phase, during the preparation of thin Ta films by standard …
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Effect of Turbulence on the Passive Film Growth and Associated Durability of Aluminum Alloys in Simulated Seawater
… in fully-developed pipe flow and both the growth and performance characteristics of passive films. Preliminary work was performed to set up (i) an environmental chamber for the experiment, (ii) design a custom wall shear stress sensor and constant temperature anemometer traverse system to …
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Computational Study of Low-friction Quasicrystalline Coatings via Simulations of Thin Film Growth of Hydrocarbons and Rare Gases
… lubricant is commonly used, knowledge of how a film of lubricant forms on the coating is required. Any adsorbed films having non-quasicrystalline structure will reduce the self-lubricity of the coatings. In this manuscript, we report the results of simulations on thin films growth of selected …
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H-Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium(001):boron Gas-Source Molecular Beam Epitaxy
Based on all the above results, the growth kinetics of B doped Si 1-xGex(001) GS-MBE were modeled. Film deposition rates RSiGe decrease by ≈50% with increasing CB ≥ 5 x 1019 cm-3 at Ts = 500°C. The TPD results were used to determine the B segregation enthalpy, -0.4 eV, significantly lower …
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