Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 297 for “"Field-effect transistors"”.
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NANOSCALE EFFECTS IN JUNCTIONLESS FIELD EFFECT TRANSISTORS
Though the concept of junctionless field effect transistor (JLFET) is old, it was not possible to fabricate a useful JLFET device, as it requires a very shallow channel region. Very recently, the emergence of new and advanced technologies has made it possible to create viable JLFET devices using …
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Interfacial Studies of Organic Field-Effect Transistors
Organic field-effect transistors (OFETs) are potential components for large-area electronics because of their attractive advantages: light weight, cost-effective and large-area processability, flexibility and resonable performance potential. However, the commercialization of OFETs faces several …
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Light scattering studies of organic field effect transistors
… devices. While much work has been done in the field of organic semiconductors, the field is still quite immature when compared to that of traditional inorganic based devices. More work is required before the full potential of organic field effect transistors (OFETs), organic light emitting …
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Improving the Stability of Organic Field-Effect Transistors
… of low-temperature solution-processing, organic field-effect transistors (OFETs) have evolved from a convenient tool for semiconductor parameter analysis to a technology slowly entering the market as circuit components in flexible electronics. Since the first devices in the 1980s, OFET mobilities …
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Carbon nanotube field effect transistors for power application
… semiconductors from which carbon nanotube field effect transistors (CNTFETs) can be made. The small feature size and high electron mobility of the CNT makes it attractive and a good candidate to replace modern MOSFETs. So far, most fabricated CNTFETs conduct currents only on the order of …
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Fabrication technology for double-gate field effect transistors
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.
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Multi-functional Hybrid Gating Silicon Nanowire Field-effect Transistors
… have led to the emergence of silicon nanowire transistors a decade ago. Along with the Si-based nanotechnology, the silicon compatible optical and chemical sensing applications have boosted the research on hybrid devices that combine the organic and inorganic materials. Apart from the …
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Polarization-induced transport in ferroelelctric organic field-effect transistors
… the role of ferroelectric dielectrics in organic field-effect transistors (FETs) to understand the mechanism of charge transport in organic semiconductors. The ferroelectric nature of the polymer, poly(vinylidene fluoride) (PVDF)), has been known for over 45 years. However, its role in interfacial …
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Zinc oxide nanowire field effect transistors for sensor applications
… and hence pursued in this thesis. ZnO thin film transistors (TFT) were fabricated using solution based precursor zinc neodecanoate. A range of ZnO thin films were prepared by varying process parameters, such as precursor concentrations and annealing temperatures, and then analysed for their …
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Electrolyte-gated graphene field-effect transistors : modeling and applications
… presents a model for electrolyte-gated graphene field-effect transistors (EGFETs) that incorporates the effects of the double layer capacitance and the quantum capacitance of graphene. The model is validated through experimental graphene EGFETs, which were fabricated and measured to provide …
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Characterization of organic field effect transistors for OLED displays
… extracted from top contact and bottom contact transistors with current-voltage (I-V) and low frequency capacitance-voltage (C-V) measurements. Extraction of contact resistance is found to be crucial in characterization of bottom-contact transistors as it obscures mobility extraction. An …
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CHARGE TRANSPORT IN ORGANIC AND HYBRID PEROVSKITE FIELD EFFECT TRANSISTORS
… silicon-based electronics. We fabricate organic field-effect transistors (OFETs) and through the use of several device architectures, in combination with surface treatments, we were able to achieve mobilities as high as 6.8 cm2/Vs. We find that the microstrain induced in the organic semiconductor …
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Chemical vapor sensing with novel coupled-channel field-effect transistors
… semiconductors suffer from the bias stress effect in atmosphere and low mobilities. Inorganic oxide semiconductors also display sensitivity to polar vapor molecules and are transparent at visible wavelengths, which makes them of interest to the display industry. Coupling disordered …
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Design, Modeling and Analysis of Non-classical Field Effect Transistors
… into nanometer regime where short channel effects (SCEs), including threshold voltage fluctuation, increased leakage current and mobility degradation, become pronounced in the traditional planar silicon MOSFET. In addition, as the demand of diversified functionalities rises, conventional …
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Electronic charge injection and transport in organic field-effect transistors
… devices based on organic semiconductors, such as field-effect transistors (FETs) and light emitting diodes have attracted much interest as possible inexpensive and flexible alternatives to inorganic devices. Despite considerable improvement in device properties, a better understanding of the …
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Characterization of Graphene Field-Effect Transistors for High Performance Electronics
It is an ongoing effort to improve field-effect transistor (FET) performance. With silicon transistors approaching their physical limitations, alternative materials that can outperform silicon are required. Graphene, has been suggested as such an alternative mainly due to its two-dimensional (2D) …
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Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications
The effect of drain-sides cap recess distance on InGaAs/GaAs PHEMT device performance at both dc and rf frequencies is investigated. This investigation is achieved though the development of a four-layer electron beam resist technique and sequential wet and dry selective etching. A high linearity of …
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