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Showing 1 to 20 of 34 for “"Field Effect Transistor (FET)"”.

  1. Small -Signal Distributed FET Modeling

    Caruth, David CharlesUniversity of Illinois at Urbana-Champaign2015

    … dissertation focuses on developing a distributed field-effect transistor (FET) small-signal model that is accurate from do to 110 GHz for a wide range of bias conditions. The distributed model is intended to be compatible with a large-signal implementation. The distributed model performance is …

    uiuc Repository record

  2. Optimum gate arrangements for MOS standardized layouts

    Robbins, David H.University of Illinois at Urbana-Champaign2013

    … in the engineering of digital circuits. The field effect transistor (FET) is making an important contribution in this area. In this paper, the basic properties of the FET which pertain to digital circuits will be examined. The problems associated with the physical layout of large integrated …

    uiuc Repository record

  3. Enhancing the Electrical Performance of Organic Field-Effect Transistors Through Interface Engineering

    Ward, Jeremy WilliamWake Forest University2015

    … thread among all electronic applications is the field-effect transistor (FET); a small electrical switch that can control the current flow. The most common material used in FETs today is silicon. Materials used in silicon-based electronics have now begun to be complemented by, and in some case …

    wfu Repository record

  4. Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy

    Hong, Seung JaeUniversity of Illinois at Urbana-Champaign2015

    … are used for the fabrication of GaN-based field-effect transistor (FET) devices such as metal semiconductor FET (MESFET) and high electron mobility transistor (HEMT). In order to investigate the GaN-based FETs, theoretical principles, processing conditions, and characterization skills of …

    uiuc Repository record

  5. A detailed study on controlled synthesis and device integration of monolithic graphene-graphite structures

    Chun, Sung GyuUniversity of Illinois at Urbana-Champaign2014

    … in number of graphene layers. Graphene based field-effect transistor (FET) is fabricated with monolithic graphene-graphite structures. Especially, superior mechanical flexibility of the fabricated graphene FET enables it to be transferred onto a variety of substrates, including soft materials. …

    uiuc Repository record

  6. Characterization of Graphene Field-Effect Transistors for High Performance Electronics

    Meric, Inanc2011

    It is an ongoing effort to improve field-effect transistor (FET) performance. With silicon transistors approaching their physical limitations, alternative materials that can outperform silicon are required. Graphene, has been suggested as such an alternative mainly due to its two-dimensional (2D) …

    columbia-diss Repository record

  7. Feature scaling of large, ballasted, field emission arrays

    Guerrera, Stephen A. (Stephen Angelo)Massachusetts Institute of Technology2011

    Field emitters are an exciting technology for high-frequency, high-power applications because of their excellent free space electron transport, and their potential for high current density and high current, especially when they are used in an array format. However, a major challenge preventing the …

    mit Repository record

  8. Au nanorods-semiconductor nanowire hybrid nanostructures : nanofabrication techniques and optoelectronic properties

    Pescaglini, AndreaUniversity College Cork2014

    … electrical characterization of ZnO nanowire field-effect transistor (FET) and optoelectronic properties of Au nanorods - ZnO nanowire FET tunable near-infrared photodetector are investigated. In particular we demonstrated orders of magnitude enhancement in the photocurrent intensity in the …

    cork Repository record

  9. Monolithically integrated MEMS resonators and oscillators in standard IC technology

    Bahr, Bichoy Waguih AzmyMassachusetts Institute of Technology2016

    … beyond the standard CMOS process. Resonant body transistor (RBT) is constructed by using active field-effect-transistor (FET) sensing. A phononic crystal (PnC) implemented in the CMOS back-end-of-line (BEOL) layers along with the bulk wafer are used to create a phononic waveguide. The latter …

    mit Repository record

  10. First principles modelling of tunnel field-effect transistors based on heterojunctions of strained Germanium/InGaAs alloys

    Correia de Abreu, João CarlosQueen's University Belfast2020

    … of the silicon metal–oxide–semiconductor (MOS) field-effect transistor (FET) and the demand for energy-efficient appliances motivate the study of alternative devices. The device under consideration is the biaxial tensile-strained Germanium on InGaAs alloy tunnel FET (TFET). The type of device …

    qu-belfast Repository record

  11. CARBON NANOTUBE THIN FILM AS AN ELECTRONIC MATERIAL

    Sangwan, Vinod Kumar2009

    … printing method to assemble CNT thin film transistors (TFT) on plastic substrates. Electrical transport properties of CNT TFTs are characterized by their conductance, transconductance and on/off ratio. Optimized device performance of CNT TFTs is realized by controlling percolation effects …

    maryland Repository record

  12. Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors

    Owen, Man Hon SamuelUniversity of Cambridge2010

    … presented in this thesis is to investigate the effects of electrostatic gating on the magnetic properties of carrier-mediated ferromagnetic Ga1−xMnxAs diluted magnetic semiconductors. (Ga,Mn)As can be regarded as a prototype material because of its strong spin-orbit coupling and its crystalline …

    cambridge Repository record

  13. Seebeck coefficient in organic semiconductors

    Venkateshvaran, DeepakUniversity of Cambridge2014

    … within the channel of the active layer in a field-effect transistor (FET). When measured within an FET, the Seebeck coefficient can be modulated using the gate electrode. The extent to which the Seebeck coefficient is modulated gives a clear idea of charge carrier trapping and the …

    cambridge Repository record

  14. Three-dimensional graphene/graphite structure for ultra-sensitive biosensor

    Choi, JonghyunUniversity of Illinois at Urbana-Champaign2014

    U of I Only Restriction Lifted for Item 50602 on 2016-09-22T20:59:21Z.

    uiuc Repository record

  15. Silicon Piezoresistive Microcantilever For Potentiometric Sensing

    Liu, Jie

    … sensors due to their applications in various fields, e.g., environmental monitoring, medical diagnosis, and national security. In general, a miniaturized chemical sensor inevitably depends on functionalization layers, which alter their electrical properties and change electrical conductance of …

    south-carolina Repository record

  16. Third Order Nonlinearity In III-Nitride Microwave Switches

    Khan, Muhammad Bilal

    … communications etc. III-Nitride Heterojunction Field Effect Transistor (HFET) microwave switches have demonstrated significant advantages over most other switch types including pin- diodes GaAs high electron mobility transistors (HEMT) and MEMS due to high breakdown, very low insertion loss, …

    south-carolina Repository record

  17. Assembly and integration of two-dimensional nanomaterials for advanced interfaces and sensors

    Choi, JonghyunUniversity of Illinois at Urbana-Champaign2018

    … of 2D materials as an advanced surface and field-effect transistor (FET)-based biochemical sensing platform, and investigate electrical double layer (EDL) formation on 2D materials. First, I present various three-dimensional (3D) integration techniques of 2D materials that exhibit promise as …

    uiuc Repository record

  18. THz Radiation Detection Based on CMOS Technology

    Khatib, MoustafaUniversità degli studi di Trento2019

    … spectroscopy. The potential advantages in these fields provide the motivation to develop room-temperature THz detectors. In terms of low cost, high volume, and high integration capabilities, standard CMOS technology has been considered as an excellent platform to achieve fully integrated THz …

    trento Repository record

  19. Volatile Organic Compound Detection And Disease Diagnostics Using Dna-Functionalized Carbon Nanotube Sensor Arrays

    Kehayias, Christopher Erkki2020

    … of interest. Sensor arrays were fabricated in a field-effect transistor (FET) configuration with exquisitely sensitive carbon nanotubes (CNTs) as the channel material. The nanotubes were functionalized with a variety of single-stranded DNA oligomers, forming DNA-NT hybrid structures with affinity …

    penn Repository record

  20. Smart Textile Lighting/Display System and Future Quantum Dot Light Emitting Diode

    Yang, JiajieUniversity of Cambridge2022

    … exhibits an excellent bending durability. The Field- effect transistor (FET) based F-biosensor shows a threshold voltage V<sub>TH</sub> of 0.9 V, an ON/OFF ratio of 10<sup>8</sup>, and a saturation mobility μ<sub>sat</sub> of 8 cm<sup>2</sup>/V·s which is comparable to the state-of-the-art …

    cambridge Repository record

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