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Showing 1 to 6 of 6 for “"Ferromagnetic semiconductor"”.

  1. Magnetotransport effects in lateral and vertical ferromagnetic semiconductor junctions

    … magnetoresistance (TAMR)effects in (Ga,Mn) based ferromagnetic semiconductor junctions. Detailed results are published in the following articles: [1] C. Rüster, T. Borzenko, C. Gould, G. Schmidt, L.W. Molenkamp, X. Liu, T.J.Wojtowicz, J.K. Furdyna, Z.G. Yu and M. Flatt´e, Very Large …

    wurz-thes Repository record for Magnetotransport effects in lateral and vertical ferromagnetic semiconductor junctions (opens in a new tab)

  2. Character of the Electronic States Near the Metal -Insulator Transition in Gallium Manganese Arsenide

    … Mott-Anderson metal-insulator transition in the ferromagnetic semiconductor Ga1-xMn xAs is studied by cross sectional scanning tunneling microscopy. 200nm thick samples grown by MBE at UCSB with doping levels from 1.5%, close the metal-insulator transition, to 5%, deep into the metallic regime, …

    uiuc Repository record for Character of the Electronic States Near the Metal -Insulator Transition in Gallium Manganese Arsenide (opens in a new tab)

  3. Character of the electronic states near the metal-insulator transition in Gallium Manganese Arsenide

    … Mott-Anderson metal-insulator transition in the ferromagnetic semiconductor Ga1-xMnxAs is studied by cross sectional scanning tunneling microscopy. 200nm thick samples grown by MBE at UCSB with doping levels from 1.5%, close the metal-insulator transition, to 5%, deep into the metallic regime, …

    uiuc Repository record for Character of the electronic states near the metal-insulator transition in Gallium Manganese Arsenide (opens in a new tab)

  4. Time-Resolved Studies of Magnetic and Non-Magnetic Narrow-Gap Semiconductors

    … spin relaxation, injection, and manipulation in semiconductors have attracted considerable interest because of several potential applications in "spintronic" devices and the necessity to understand and control spin-based phenomena. In light of the growing interest in spin-related phenomena and …

    vt Repository record for Time-Resolved Studies of Magnetic and Non-Magnetic Narrow-Gap Semiconductors (opens in a new tab)

  5. Orbital-dependent exchange-correlation functionals in density-functional theory realized by the FLAPW method

    … scheme. We show PBE0 results for a variety of semiconductors and insulators. In comparison with experiment, the PBE0 functional leads to improved band gaps and an improved description of localized states. Even for the ferromagnetic semiconductor EuO with localized 4f electrons, the electronic …

    aachen Repository record for Orbital-dependent exchange-correlation functionals in density-functional theory realized by the FLAPW method (opens in a new tab)

  6. Current-induced torque driven ferromagnetic resonance in magnetic microstructures

    … and an alternating current in a uniform ferromagnetic system. Diluted magnetic semiconductors (Ga,Mn)As and (Ga,Mn)(As,P) have been studied. Due to their strong spin-orbit coupling and well-understood band-structure, these materials are well-suited to this investigation. The combined …

    cambridge Repository record for Current-induced torque driven ferromagnetic resonance in magnetic microstructures (opens in a new tab)