Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 8 of 8 for “"Ferroelectric capacitor"”.
-
Integration of Ferroelectric Materials into High Density Non-Volatile Random Access Memories
The characteristic polarization response of a ferroelectric material to an applied electric field enables a binary state device in the form of a thin film ferroelectric capacitor that can be used to store digital information. In a high density memory the capacitor is placed on the top of a …
-
Additive Fabrication of Microstructures Using Self-Assembled Organic Thin-Film Templates
A simple multilayered device, a ferroelectric capacitor with platinum/PZT/platinum layers, was fabricated using the patterning methods developed in this thesis. This achievement demonstrates the possibility of developing a photolithography-free method for fabricating micron-scale …
-
Process-Induced Degradation during the Integration of Pb(Zr/x Ti/1-x)O3 Ferroelectric Capacitors
… damage which hampers the realization of FRAM (ferroelectric random access memory) device are investigated; dry etching induced damage, hydrogen-induced degradation, and stress effect. Since ferroelectric capacitors utilize the movement of body-centered atoms in perovskite structure, Ti or Zr in …
-
Electrical transport properties of barium titanate-based capacitor ceramics
Electrical conduction mechanisms in BaTiO₃-based ferroelectric capacitor ceramics with an emphasis on the X7R type were studied. Dominant charge carriers in this material were identified as conduction band electrons below a temperature of 850°C. This was substantiated by the following results: …
-
Circuit design for embedded memory in low-power integrated circuits
… memory (SRAM) and non-volatile memory-based on ferroelectric capacitor technology-into lowpower integrated circuits. First considered is the impact of process variation in deep-submicron technologies on SRAM, which must exhibit higher density and performance at increased levels of integration …
-
Reliability and processing of ferroelectric thin film capacitors with emphasis on fatigue and etching
Ferroelectric materials are characterized by a reversible spontaneous polarization in the absence of an electric field. The characteristic polarization response of a ferroelectric material to an applied electric field enables a binary state device in the form of a thin film ferroelectric capacitor …
-
Ferroelectric Thin Films for High Density Non-volatile Memories
Ferroelectric random access memories (FRAM) are considered as future memories due to high speed, low cost, low power, excellent radiation hardness, nonvolatility, and good compatibility with the existing integrated circuit (IC) technology. The non-volatile FRAM devices are divided into two …
-
Ferroelectric doped hafnium oxide and its application on electronic devices
Ferroelectricity is the material property such that we can induce spontaneous polarization, reverse it and modulate it by varying the applied electrical field on the ferroelectric material. Recently, doped hafnium oxide (HfO2) has garnered attention with its excellent scalability, reliability, and …