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Showing 1 to 7 of 7 for “"FeRAM"”.

  1. Advanced circuit design of gigabit density ferroelectric random access memories

    … design of ferroelectric memory chips - called FeRAMs (ferroelectric random access memories). Regular circuits and techniques used in today's FeRAMs are examined for their suitability for use in future FeRAMs. New circuits and techniques are also presented. Some of these have been used in two …

    aachen Repository record for Advanced circuit design of gigabit density ferroelectric random access memories (opens in a new tab)

  2. INVESTIGATION OF THE STRUCTURAL PROPERTIES OF HAFNIUM ZIRCONIUM OXIDE THIN FILMS

    … junctions with higher readout currents than FeRAM, and with non-destructive read-out. Both of these properties are in favour of scaling. Ferroelectricity in HfxZr1-xO2 is attributed to the presence of the polar orthorhombic phase, formed in-situ by the transformation of the tetragonal phase. …

    sask Repository record for INVESTIGATION OF THE STRUCTURAL PROPERTIES OF HAFNIUM ZIRCONIUM OXIDE THIN FILMS (opens in a new tab)

  3. Template-controlled integration and characterization of bottom-up grown ferroelectric nanoislands

    … of the Ferroelectric Random Access Memory (FeRAM) was enabled, which uses the spontaneous polarization of ferroelectric thin-films to store digital information non-volatile. Beyond, ferroelectric films are likewise employed due to their outstanding dielectric, piezoelectric and pyroelectric …

    aachen Repository record for Template-controlled integration and characterization of bottom-up grown ferroelectric nanoislands (opens in a new tab)

  4. Metallorganische Chemische Gasphasenabscheidung (MOCVD) ferroelektrischer Dünnschichten : Herstellung und Charakterisierung

    … using ferroelectric crystalline thin films (FeRAM) are a possible replacement for Flash- and DRAM-memory with equivalent or superior performance. Ferroelectric films consisting of lead zirconate titanate (PZT) are a promising candidate for the application in these memory devices. One problem …

    aachen Repository record for Metallorganische Chemische Gasphasenabscheidung (MOCVD) ferroelektrischer Dünnschichten : Herstellung und Charakterisierung (opens in a new tab)

  5. Formation and characterization of SrBi 2 Ta 2 O 9 (SBT)thin film capacitor module with Platinum-Titanium bottom and Platinum top electrodes

    New ferroelectric memories (FeRAMs) provide a enormous business potential. They are nonvolatile, they can be designed like a DRAM with a small cell, and they exhibit fast read and write times. Especially interesting for mobile applications are FeRAMs with SrBi2Ta2O9 (SBT) due to their low voltage …

    aachen Repository record for Formation and characterization of SrBi 2 Ta 2 O 9 (SBT)thin film capacitor module with Platinum-Titanium bottom and Platinum top electrodes (opens in a new tab)

  6. Energy-Efficient System Architectures for Intermittently-Powered IoT Devices

    Various industry forecasts project that, by 2020, there will be around 50 billion devices connected to the Internet of Things (IoT), helping to engineer new solutions to societal-scale problems such as healthcare, energy conservation, transportation, etc. Most of these devices will be wireless due …

    purdue-thes Repository record for Energy-Efficient System Architectures for Intermittently-Powered IoT Devices (opens in a new tab)