Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 4 of 4 for “"False Turn-On"”.
-
Gate Driver for Phase Leg of Parallel Enhancement-Mode Gallium-Nitride (GaN) Transistors
With a higher power rating and broader application, Gallium nitride (GaN) is a promising next-generation power switch. The current four GaN HEMTs in paralleled phase leg that can block 400 V and conduct 200 A current is very beneficial, thus making the protection method on a GaN phase leg an urgent …
-
Resonant Cross-Commutated Dc-Dc Regulators with Omni-Coupled Inductors
… noise in a hard-switched point-of-load (POL) converter may result in false turn on, electromagnetic interference issues, or even device breakdown. A resonant cross-commutated buck (rccBuck) converter operates with low noise since all MOSFETs are turned on with zero voltage within a wide load …
-
Equivalent Modeling of Medium-Voltage Gate Drive Circuitry
There has been a recent increase in the utilization of wide bandgap (WBG) devices in power electronic converter designs. Designs leveraging these devices are capable of achieving high efficiencies and increased power density as compared to more traditional Silicon (Si) based converters. The same …
-
Behavioral Modelling of the Transient and CdV/dt Induced Turn-on of a Hybrid High Power Switch Unit
… in a half bridge arrangement the possibility of false turn becomes a concern. The SiC MOSFETs improved transient characteristics leads to higher dv/dt during switching, which can induce a spike in the gate voltage of the low side Si IGBT through the parasitic capacitances. This behavior poses a …