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Showing 1 to 9 of 9 for “"Extreme Ultraviolet Lithography (EUVL)"”.
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Materials for next-generation lithography: Crosslinked molecular resists and photo-patternable underlayers
… lithographic techniques, including extreme ultraviolet lithography (EUVL), are expected to replace current lithography processes in the coming years. This new technique will require new tools and materials in order to be realized. In particular, new photoresists will need to be …
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Radiation Studies Of The Tin-doped Microscopic Droplet Laser Plasma Light Source Specific To Euv Lithography
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology to be inserted in ~ 2009 for the mass production of IC chips with feature sizes <35 nm. One major challenge to its implementation is the development of a 13.5 nm EUV source of radiation that meets …
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Photolithography and surface modification applications of a 172 nanometer xenon microplasma excilamp
A high power 172 nm vacuum ultraviolet (VUV) excimer lamp has been utilized in defining patterns on a photoresist. The mechanism by which the lamp works is different from conventional methods as the photoresist is removed at a rate of 3.3 nm/s from the substrate and no development is required. This …
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Removal of organic contaminants from lithographic materials
… issues still facing the implementation of extreme ultraviolet lithography (EUVL) into mainstream manufacturing for integrated circuit (IC) production is cleanliness. EUV photons at 13.5 nm are easily absorbed by many species, including dust, thin-film layers, and other debris present in the …
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Electroquasistatic sensors for surface and subsurface nano-imaging of integrated circuit features
… contaminant particles that might be present on extreme ultraviolet lithography (EUVL) photomasks used in the mass production of next-generation integrated circuits. FEM simulation results demonstrate the sensitivity of EQS sensor arrays in detecting various contaminant particles located in a …
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Debris Characterization And Mitigation Of Droplet Laser Plasma Sources For Euv Lithography
Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under development for fabricating semiconductor devices with feature sizes smaller than 32 nm. The optics to be used in the EUVL steppers is reflective optics with multilayer mirror coatings on each surface. The …
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Cleaning of tin debris by reactive ion etching in a discharge-produced EUV plasma source
Extreme ultraviolet lithography (EUVL) is a promising candidate for the next generation of lithography technique to continue Moore's law. Moore's law has been upheld by shrinking the feature size on devices and driving the development of faster and denser integrated chips. The short wavelength …
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Removal of tin from exterme ultraviolet collector optics by an in-situ hydrogen plasma
… device feature sizes, the wavelength of the lithography source remained at or below the resolution limit of the minimum feature size. Since 2001, however, the light source has been the 193nm ArF excimer laser. While the industry has managed to keep up with Moore’s Law, shrinking feature sizes …
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Optimization for advanced lithography
Lithography has always been the most critical process in integrated circuit (IC) fabrication. Below the 28 nm technology node, conventional 193 nm immersion lithography (193i) with single exposure has reached its printability limit. In order to keep up with Moore's law, a lot of advanced …