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Showing 1 to 1 of 1 for “"Epitaxial laser on silicon"”.

  1. Design, defect reduction, and dislocation tolerance of red lasers on Si (001)

    Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-05-01

    uiuc Repository record for Design, defect reduction, and dislocation tolerance of red lasers on Si (001) (opens in a new tab)