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Showing 1 to 1 of 1 for “"Enhancement-mode metal-oxide-semiconductor high electron mobility transistor (MOSHEMT)"”.

  1. Development of high-performance GaN-based power transistors

    … study on the development of GaN-based high-power transistors. First, selective area growth by plasma-assisted molecular beam epitaxy, a technology developed by our group for Ohmic contact improvement, is utilized to fabricate large-periphery AlGaN / GaN high electron mobility

    uiuc Repository record for Development of high-performance GaN-based power transistors (opens in a new tab)