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Showing 1 to 5 of 5 for “"Energetic ion bombardment"”.

  1. A study of the structure of codeposited PVD coatings

    … coatings codeposited by magnetron sputterion plating was studied. This apparently simple topic has never been studiedsystematically and has led to a number of unexpected and very interestingresults.The systems that were studied included materials with 100% solid-solubility,(titanium and …

    salford Repository record for A study of the structure of codeposited PVD coatings (opens in a new tab)

  2. Surface Morphology Evolution of Epitaxial TiN(001) Layers Grown by Reactive Magnetron Sputtering

    The group IV-B transition metal nitride TiN is widely employed as a wear-resistant coating on mechanical components and as a diffusion barrier in microelectronic devices. I use the epitaxial growth of single crystal TiN as a model system for insight on the evolution of surface morphology and …

    uiuc Repository record for Surface Morphology Evolution of Epitaxial TiN(001) Layers Grown by Reactive Magnetron Sputtering (opens in a new tab)

  3. Deposition of tantalum thin films by RF sputtering with substrate bias

    The effects of energetic ion bombardment on the crystallographic structure of RF sputtered tantalum thin films on different substrates, particularly aluminum and silicon, have been studied. The effect of substrate biasing on ion current and film thickness has been investigated. The study included …

    njit Repository record for Deposition of tantalum thin films by RF sputtering with substrate bias (opens in a new tab)

  4. Radiation Transport in Low Pressure Plasmas: Lighting and Semiconductor Etching Plasmas

    Ultra-violet (UV) radiation is emitted by many molecular and atomic species in technological plasmas. In some products like lamps, the transport of radiation is an important design consideration. In other instances, such as semiconductor materials processing, the role of UV photons in surface …

    uiuc Repository record for Radiation Transport in Low Pressure Plasmas: Lighting and Semiconductor Etching Plasmas (opens in a new tab)

  5. Ion-induced stress relaxation during the growth of cubic boron nitride thin films

    … sputtering under simultaneous stress relaxation by ion implantation. An in situ instrument based on laser deflectometry on cantilever structures and in situ ellipsometry, was used for in situ stress measurements. The characteristic evolution of the instantaneous stress during the layered …

    qucosa-diss