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Showing 1 to 7 of 7 for “"Elektronischer Transport"”.

  1. Elektronischer Transport in Graphen

    … 14e^2/h… . As a starting point for in-depth transport measurements the processing of graphene field effect transistors (GFETs) has been developed and optimized, based on the pioneering work by Novoselov et al.. The optimized process provides samples with carrier mobilities up to 16000 cm^2/Vs …

    aachen Repository record for Elektronischer Transport in Graphen (opens in a new tab)

  2. Electronic transport in ropes of single wall carbon nanotubes

    … of single wall nanotubes have been conducted. Transport inside as well as between nanotubes has been charcterized. Recognizing the importance of non-invasive contacts for measurments of the intrinsic characteristics a new contact geometry has been proposed. It involves contacts attached to the …

    aachen Repository record for Electronic transport in ropes of single wall carbon nanotubes (opens in a new tab)

  3. Giant Magnetoresistance - eine ab-initio Beschreibung

    … ist ein Beitrag zur Theorie des spinabhängigen Transports in magnetischen Vielfachschichten. Es wird erstmalig eine parameterfreie Beschreibung des Giant Magnetoresistance (GMR) vorgelegt, welche detaillierte Einsichten in die mikroskopischen Vorgänge gestattet. Die ab-initio Berechnung der …

    qucosa-diss

  4. Functional renormalization group studies of quantum transport through mesoscopic systems

    … sizes on a nanometer to micrometer scale. The transport properties of such quasi zero- or one-dimensional systems are considerably influenced by the electron-electron interaction. In theoretical studies this often becomes apparent in the emergence of divergences in a perturbative treatment of …

    aachen Repository record for Functional renormalization group studies of quantum transport through mesoscopic systems (opens in a new tab)

  5. Design and development of radiation-resistant and low-noise semiconductor transistors for applications in high frequency communication systems

    … properties have been studied, starting from DC transport properties in bare 2DEG channels up to investigation of phase noise of a X-band HEMT-based oscillator. This work is separated into five parts. In the first part, basics of fluctuation phenomena in semiconductors are described along with a …

    aachen Repository record for Design and development of radiation-resistant and low-noise semiconductor transistors for applications in high frequency communication systems (opens in a new tab)

  6. An efficient full-potential linearized augmented plane wave electronic structure method for charge and spin transport through realistic nanoferronic junctions

    … the efficient computation of charge and spin transport properties in realistic nanoferronic materials and nanostructures. First, an order-N implementation of the FLAPW method is presented, which allows the efficient calculation of electronic transport in magnetic tunnel junctions (MTJs) and …

    aachen Repository record for An efficient full-potential linearized augmented plane wave electronic structure method for charge and spin transport through realistic nanoferronic junctions (opens in a new tab)

  7. Electrical transport and switching in phase change materials

    … statistics model in a multiple band transport picture. The simulations could reproduce all features observed in the experiment, and it was found that the threshold switching field varies strongly between different phase change materials which was linked to the difference in bandgap …

    aachen Repository record for Electrical transport and switching in phase change materials (opens in a new tab)