Global ETD Search
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Showing 1 to 20 of 32 for “"Electron Trapping"”.
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Fluctuations in dc SQUIDs: Quantum Noise Effects, Low Frequency Noise, and Single Electron Trapping
… switching behavior which results from the trapping and untrapping of single electrons into localized defect states residing within the tunneling barrier. The weak temperature of the trap lifetimes reveals that the trapping process displays tunneling kinetics. In contrast, the voltage bias …
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Fluctuations in dc SQUIDs: Quantum Noise Effects, Low Frequency Noise, and Single Electron Trapping
Submitted by Carolyn Mead (cmead2@illinois.edu) on 2011-06-20T14:25:06Z No. of bitstreams: 1 1987_wakai.pdf: 3819337 bytes, checksum: a5d33ec70db1b29e666efe334b7fae0e (MD5)
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Bias temperature instability (BTI) in GaN MOSFETs
… alternative to Si for transistors for power electronics. For high-voltage applications, the GaN high electron mobility transistor with insulated gate (MIS-HEMT) is an attractive transistor structure because of its high breakdown voltage combined with low gate leakage current. Impressive …
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Charge transport in printed silicon nanoparticle networks
… bending at the interface between particles and electron trapping at surface states. To probe the charge transport, two types of printed silicon nanoparticle networks based on milled silicon nanoparticles and highly doped p-type chemical vapour synthesised nanoparticles, were studied and compared.
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Dynamic ON-resistance in high voltage GaN field-effect-transistors
… for the world. With current Si-based power electronics system being matured, GaN Field-Effect-Transistors have emerged as a disruptive technology with great potential that arises from the outstanding material properties of GaN. However, in spite of great progress in GaN device fabrication, …
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Packaging of Enhancement-Mode Gallium Nitride High-Electron-Mobility Transistors for High Power Density Applications
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are favored for their smaller specific on-resistance, lower switching losses, and higher theoretical temperature limits as compared to traditional silicon (Si) power switches. They have the potential to dramatically increase the power …
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Vlasov simulations of kinetic enhancement of Raman backscatter in laser fusion plasmas
… in a finite length, homogeneous plasma show electron trapping drastically elevates the reflected light over convective gain values ("kinetic enhancement"). Average reflectivities are [approx.] 10%, while the instantaneous reflectivity is chaotic and does not reach a steady state. Trapping …
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Modeling the formation of current sheets in symmetric and asymmetric reconnection
… an analytic model for the evolution of the electron phase space distribution function based on adiabatic invariants. We then apply this two model problems-Fermi acceleration and electron trapping-to extend previous results in these areas and model their effects on parallel heating. Following …
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Infrared Spectroscopic Measurement of Titanium Dioxide Nanoparticle Shallow Trap State Energies
Within the "forbidden" range of electron energies between the valence and conduction bands of titanium dioxide, crystal lattice irregularities lead to the formation of electron trapping sites. These sites are known as shallow trap states, where "shallow" refers to the close energy proximity of …
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Reliability Studies of TiN/Hf-Silicate Based Gate Stacks
… Their reliability, which is limited by trapping at pre-existing and stress induced defects, remains to be a major concern. Energy levels of electrically active ionic defects within the thick high-[Kappa] have been experimentally observed in the context of MOS band diagram for the first …
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Charge trapping instabilities in amorphous silicon/silicon nitride thin film transistors
Charge trapping phenomena within amorphous silicon-silicon nitride TFTs have been characterised in an extensive study. A new experimental technique has been developed and applied in conjunction with the standard measurement of threshold voltage.<br/><br/>The new technique reveals two electron …
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Kinetic modeling of electrodynamic space tethers
… current can be collected from the ionospheric electrons, which also creates a drag. Although the principle is simple, one theoretical issue still has to be addressed: How much current is collected in realistic LEO conditions by a tether of a given section and potential ? The current theories of …
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Characterization of high-k layers as the gate dielectric for MOSFETs
… 3,4 and 5. Chapter 3 characterizes a s-grown electron traps in HfO2/SiO2s tacks. The issues addressed include the impact of measurement technique on electron trapping, contribution of different current components to trapping, trap location, and the capture cross section and trapping kinetics. …
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Theoretical Study of Electron Transport and Trapping in Solvated Titanium Dioxide Nanoparticles
… DFT calculations, and theoretical modeling of electron transport and trapping in solvated TiO_2 nanoparticles. In first half, We implemented an OpenMP/MPI hybrid parallelization implementation of the pseudospectral algorithm, developed a fragment based initial guess methodology which is …
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Some electrical properties of thin films of polypropylene formed by vacuum evaporation
… In these measurements there was evidence of electron trapping and the trap depth was estimated by using the thermally-stimulated current techniques, and was found equal to 0.33 eV. Thin films of evaporated polypropylene having thicknesses less than 1000Å, showed electroforming effects and …
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Optical and Electronic Interactions at the Nanoscale
In this dissertation, we discuss optical and electronic interactions in three nanometer scale semiconductor systems in a broadly defined sense. These studies are performed using time-integrated and time-resolved optical spectroscopies and temperature- and field-dependent electrical transport …
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Surge-energy and Overvoltage Robustness of Cascode GaN Power Transistors
… surge energy via avalanche, the GaN high-electron-mobility transistor (HEMT) has no avalanche capability and withstands surge energy by its overvoltage capability. However, a comprehensive study into the surge-energy robustness of the cascode GaN HEMT, a composite device made of a GaN HEMT …
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Stabilizing Degenerate Dopants in Colloidal Semiconductor Nanocrystals
… devices, a detailed understanding of their electronic structural properties is essential. Precise control over the introduction and removal of degenerate dopants from semiconductor nanostructures presents exciting opportunities for careful study of their electronic structures and associated …
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Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs
AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high power and high frequency applications. However, the poor long term …
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