Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 146 for “"Electron Beam Lithography"”.
-
Electron beam lithography for nano-antenna fabrication
Lithography methods have been used for patterning of small features for decades; in this research project, I examined Electron Beam Lithography (EBL) for fabrication of nano-antennas and then parameterized EBL variables to improve patterning. I overcame difficulties in some steps of this method to …
-
Magnetic bearing stages for electron beam lithography
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 1998.
-
Nanometer-scale placement in electron-beam lithography
Electron-beam lithography is capable of high-resolution lithographic pattern generation (down to 10 nm or below). However, for conventional e-beam lithography, pattern-placement accuracy is inferior to resolution. Despite significant efforts to improve pattern placement, a limit is being …
-
Real-time spatial-phase-locked electron-beam lithography
The ability of electron-beam lithography (EBL) to create sub-10-nm features with arbitrary geometry makes it a critical tool in many important applications in nanoscale science and technology. The conventional EBL system is limited by its poor absolute-placement accuracy, often worse than its …
-
Improvements to the alignment process in electron-beam lithography
Electron beam lithography is capable of defining structures with sub-10 nm linewidths. To exploit this capability to produce working devices with structures defined in multiple 'lithographic steps' a process of alignment must be used. The conventional method of scanning the electron beam across …
-
Low-voltage spatial-phase-locked scanning-electron-beam lithography
Spatial-phase-locked electron-beam lithography (SPLEBL) is a method that tracks and corrects the position of an electron-beam in real-time by using a reference grid placed above the electron-beam resist. In this thesis, the feasibility of spatial-phase-locked lowvoltage electron-beam lithography is …
-
High-accuracy, speed-optimized positioning system for electron beam lithography
Thesis: M.S., Massachusetts Institute of Technology, Department of Electrical Engineering and Computer Science, 1982
-
Achieving sub-10-nm resolution using scanning electron beam lithography
… the highest possible resolution using scanning-electron-beam lithography (SEBL) has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications have driven demand for feature sizes well into the sub-10-nm domain. While SEBL has the highest resolution …
-
Nanometer-precision electron-beam lithography with applications in integrated optics
Scanning electron-beam lithography (SEBL) provides sub-10-nm resolution and arbitrary-pattern generation; however, SEBL's pattern-placement accuracy remains inadequate for future integrated-circuits and integrated-optical devices. Environmental disturbances, system imperfections, charging, and a …
-
Three-dimensional nanofabrication by electron-beam lithography and directed self-assembly
… three-dimensional (3D) nanofabrication using electron-beam lithography (EBL), block copolymer (BCP) self-assembly, and capillary force-induced self-assembly. We first developed new processes for fabricating 3D nanostructures using a hydrogen silsesquioxane (HSQ) and poly(methylmeth-acrylate) …
-
Conformationally Immobile Calix[6]arenes as Negative Resists in Electron Beam Lithography
… purified, and then formulated into negative electron beam resists. The index of refraction (at 632.8 nm) was determined for both compounds. Spin speed curves of various concentrations (w/w) of these compounds were also created. Both compounds were found to form thin, robust films up to 5.0 …
-
Electron-beam lithography towards the atomic scale and applications to nano-optics
Electron-beam lithography (EBL) is a high-resolution pattern generation technique widely used in research and development. However, EBL resolution has been limited to 4 nm isolated features and 16 nm periodic structures. Furthermore, the physical mechanisms that limit EBL resolution are not …
-
Electron beam lithography of molecular glass resist films prepared by physical vapor deposition
… of the art exposing technique 193 nm immersion lithography with applied multi-patterning gradually reaches its limits in the ongoing miniaturization. But for the continuation of miniaturization of integrated circuits in the long term, a further progression in the processing steps as well as the …
-
Sub-10-nm electron-beam lithography for templated placement of colloidal quantum dots
… the investigation of resolution limits of electron-beam lithography (EBL) at the sub-10-nm scale. EBL patterning was investigated at low electron energy (2 keV) in a converted scanning electron microscope and at high electron energy (200 keV) in an aberration-corrected scanning transmission …
-
Development of a scintillating reference grid for spatial-phase-locked electron-beam lithography
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.
-
Highly coherent gratings for optoelectronics : an application of spatial-phase-locked electron beam lithography
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.
-
In-situ Scanning Electron Microscopy for Electron-beam Lithography and In-situ One Dimensional Nano Materials Characterization
In this thesis, we demonstrate in-situ scanning electron microscopy techniques for both electron beam lithography (EBL) and in-situ one dimensional nano materials electrical characterization. A precise voltage contrast image positioning for in-situ EBL to integrate nanowires into suspended …
-
Concentric Microresonators Design For Dispersion Engineering and Scalable Electron-Beam Lithography for Si and SiN Photonic Platforms
… On the fabrication side, a robust subtractive electron-beam lithography (EBL) process is established for the silicon-on-insulator (SOI) platform, enabling reliable pattern transfer from sub-50 nm to micrometer-scale structures. Using this process, corrugated Bragg gratings for optical filtering …
-
Manufacturable Millimeter-Wave Gallium Arsenide MESFET Integrated Circuit Technology
… $\mu$m T-gate FETs using ion-implantation and electron-beam lithography techniques are also discussed.
-
Pattern-placement-error detection for spatial-phase-locked e-beam lithography (SPLEBL)
Spatial-phase-locked electron-beam lithography (SPLEBL) is a new paradigm for scanning electron-beam lithography (SEBL) that permits nanometer-level pattern placement accuracy. Unlike conventional SEBL systems which run in an open-loop fashion, SPLEBL uses continuous feedback to directly monitor …
Page 1 of 8