Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 22 for “"EUV lithography"”.
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Debris Characterization And Mitigation Of Droplet Laser Plasma Sources For Euv Lithography
Extreme ultraviolet lithography (EUVL) is a next generation lithographic techniques under development for fabricating semiconductor devices with feature sizes smaller than 32 nm. The optics to be used in the EUVL steppers is reflective optics with multilayer mirror coatings on each surface. The …
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Radiation Studies Of The Tin-doped Microscopic Droplet Laser Plasma Light Source Specific To Euv Lithography
Extreme ultraviolet lithography(EUVL) is being developed worldwide as the next generation technology to be inserted in ~ 2009 for the mass production of IC chips with feature sizes <35 nm. One major challenge to its implementation is the development of a 13.5 nm EUV source of radiation that meets …
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Gibbsian Segregating Alloys Driven by Thermal and Concentration Gradients: A Potential Grazing Collector Optics Used in EUV Lithography
A critical issue for EUV lithography is the minimization of collector degradation from intense plasma erosion and debris deposition. Reflectivity and lifetime of the collector optics will be heavily dependent on surface chemistry interactions between fuels and various mirror materials, in addition …
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Progress in coherent lithography using table-top extreme ultraviolet lasers
… describes alternative extreme ultraviolet (EUV) lithography techniques which combine table-top EUV laser and various cost-effective imaging strategies. For each technique, numerical simulations, system design, experiment result and its analysis will be presented. In chapter II, a brief …
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Game theoretic models of inter-firm R&D dynamics in semiconductor manufacturing
… transitions in semiconductor manufacturing: EUV lithography (EUVL) and 450mm silicon wafers. The iterative multi-data-source process used for establishing appropriate game structures and payoff estimates is described in detail. Contextual realism was augmented by in-depth behavioral analysis …
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Magnetically levitated hysteresis motor driven linear stage for in-vacuum transportation tasks
… mechanism for extreme ultraviolet (EUV) photolithography machines. In the photolithography process, the reticle is a quartz plate that contains a pattern of the integrated circuit, which needs to be transported between a storage position and the exposure stage. In next-generation EUV …
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Fast Large-Scale Electromagnetic Simulation of Doubly Periodic Structures in Layered Media
… can be commonly found in extreme ultraviolet (EUV) lithography, metasurfaces, and frequency selective surfaces. Such problems can be solved by rigorous numerical methods like finite-difference time-domain (FDTD) method and finite element method (FEM). However, FDTD and FEM are universal methods …
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Time-resolved spectroscopic investigation of N2/H2 nanosecond pulsed discharges and EUV-induced low-temperature plasmas
Extreme ultraviolet (EUV) lithography is central to advanced semiconductor manufacturing, yet the low-density plasmas triggered by EUV photons in scanner-relevant environments remain only partially characterised. Their transient, photon-driven nature complicates invasive diagnostics and makes …
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Surface cleaning of optics by plasma (scope) with atomic hydrogen
… in the implementation of extreme ultraviolet (EUV) light photolithography in production tools is the accumulation of fuel debris on the collector optics near the pinch region. Specifically, removal of deposited tin from the source onto the collector optics is needed to improve the lifetime of …
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Limits of High Harmonic Generation conversion efficiency
… attosecond pulses and can have applications in EUV lithography and bio-microscopy. HHG can be described by the Three Step Model (TSM), due to the three stages of the process: ionization, propagation and recombination. However, HHG suffers from low efficiencies and a study, which shows the …
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Magnetic mitigation of energetic ions for extreme ultraviolet lithography sources
… limits. The widely-used manufacturing process of lithography currently makes use of 193nm light, which is approximately an order of magnitude greater than the smallest feature size, 22nm. The use of 193nm light to etch such small features is done with advanced techniques that come at a great cost …
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Hydrogen surface wave plasma cleaning of the EUV collector
… are being investigated for the limiting step, lithography, to cut costs and drive innovation. The current industry standard of 193 nm light from an excimer laser has been manipulated through techniques such as multiple pattern or immersion lithography to reduce the wavelength and size of the …
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Optimization for advanced lithography
Lithography has always been the most critical process in integrated circuit (IC) fabrication. Below the 28 nm technology node, conventional 193 nm immersion lithography (193i) with single exposure has reached its printability limit. In order to keep up with Moore's law, a lot of advanced …
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Creation of 3-dimensional micro-optical materials
… 2 will be focused on multi-beam interference lithography, a technique whereby the interference pattern of beams of light is converted into a pattern of solid photoresist, often used to create photonic crystals. The mathematical relations between the interfering beams and the fabricated pattern …
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Layout decomposition for triple patterning lithography
… limitations, the traditional 193 nm immersion lithography is facing huge challenges in fabricating such tiny features. Several types of next-generation lithography techniques have been discussed for years, such as {\em extreme ultra-violet} (EUV) lithography, {\em E-beam direct write}, and {\em …
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Removal of tin from exterme ultraviolet collector optics by an in-situ hydrogen plasma
… device feature sizes, the wavelength of the lithography source remained at or below the resolution limit of the minimum feature size. Since 2001, however, the light source has been the 193nm ArF excimer laser. While the industry has managed to keep up with Moore’s Law, shrinking feature sizes …
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Materials for next-generation lithography: Crosslinked molecular resists and photo-patternable underlayers
… techniques, including extreme ultraviolet lithography (EUVL), are expected to replace current lithography processes in the coming years. This new technique will require new tools and materials in order to be realized. In particular, new photoresists will need to be developed that can be …
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Fundamental Study of Particle Formation, Transport, Deposition and Filtration for Semiconductor Applications
… to ~2 nm) by using the current start-of-the-art EUV lithography system. As a result, the particle size of interest becomes smaller. Preventing and controlling particle contaminations is essential in the semiconductor manufacturing process to increase semiconductor yield. Examples of these …
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