Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 411 for “"EPITAXY"”.
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Silicon molecular beam epitaxy
This thesis reports on the techniques used in the growth and doping of Si-MBE layers prepared in a commercial molecular beam growth system and in the evaluation of their electrical and crystallographic properties. A number of technological problems associated with flux monitoring, the flaking of …
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Gallium Nitride Remote Epitaxy
… a new layer transfer technology based on remote epitaxy is developed. Remote epitaxy takes advantage of the atomic thickness of the two-dimensional (2D) material so that the wafer covered by 2D material can still be the substrate for epitaxial growth. At the same time, the weak van der Waals …
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Physical mechanism behind mediation epitaxy
Submitted by Meng Tao (mengtao2@illinois.edu) on 2012-10-23T19:18:52Z No. of bitstreams: 1 Kleinschmit.pdf: 1908524 bytes, checksum: c26a9d440b410f9baa0bfe015d9c05dc (MD5)
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Molecular Beam Epitaxy: A Thermomechanical Treatment
We perform a linear stability analysis, and consider the dependence of the growth rate of instability on the wave number. This dispersion relation is a function of many parameters that describe the elasticity and chemistry of the film and substrate. The analysis permits us to recover the classical …
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Nanoscale Selective Area Epitaxy for Optoelectronic Devices
… of self-assembly by combining selective area epitaxy via metal-organic chemical vapor deposition (MOCVD) with high-resolution electron beam lithography to achieve lateral control over semiconductor structures at the nanometer scale. Two different structures are presented. The first is …
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Studies and Applications of Molecular Beam Epitaxy
Submitted by Jenny Wong-Welch (wongwel2@illinois.edu) on 2011-11-10T23:23:49Z No. of bitstreams: 1 1992_matheny.pdf: 3841756 bytes, checksum: 8d6b8afce27924420d869f3236163bec (MD5)
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Studies and applications of molecular beam epitaxy
… steps on nucleation and growth in molecular beam epitaxy (MBE). Studies of the critical temperature between two-dimensional and three-dimensional growth are completed by means of reflection high energy diffraction. These critical temperatures are observed to depend on the density of surfaces steps …
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Modeling of gallium nitride molecular beam epitaxy growth
… processes to investigate the molecular beam epitaxy growth of GaN using ammonia and ECR plasma source. A surface riding layer of Ga and ammonia or N plasma species are included in the model. The surface riding species are allowed to undergo several physical and chemical processes. Rates of …
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Organotellurium compounds for metal organic vapour phase epitaxy
… by the technique of Metal Organic Vapour Phase Epitaxy using simple alkyl telluride compounds as the source of tellurium. New tellurium precursors are required in order to overcome handling and toxicity problems and to reduce the growth temperature in preparing the material. A range of …
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Selective lateral nano-epitaxy for manufacturable nanowire electronics
… of VLS growth is called Selective Lateral nano-Epitaxy (SLE), where the selectivity is provided by seed nanoparticles. Those planar nanowires are compatible with the well-established planar processing technology and are therefore a potential solution to realizing manufacturable nanowire-based …
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Laser induced epitaxy of Ni and Co silicides
Laser annealing of metal layers on silicon substrates failed to produce uniform silicide layers. This can be attributed to constitutional supercooling effects. Laser annealing of thermally grown monosilicides gave low (~5%) minimum yields for Co and Ni on <111> substrates1 as well as Ni on <100> …
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Mechanism of remote epitaxy using two dimensional materials
Van der Waals epitaxy (vdWE) has gained great interest as it provides the ability to relax the strict lattice matching conditions required in conventional epitaxy of covalent or ionic single crystal substrates. With the rise of two-dimensional (2D) materials since the isolation of graphene in 2004, …
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Low Temperature Selective Silicon Epitaxy at the Nanometer Scale
… nanometer scale, selective silicon epitaxy using the hydrogen-passivated silicon surface as a lithographic mask has been developed. The STM tip is used to define chemically reactive templates on the monohydride Si(100) surface at temperatures below the monohydride desorption peak, …
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Structure and epitaxy studies of cobalt silicide/silicon heterostructures
Interfacial pinhole formation was identified at the CoSi/Si interface and involves several active mechanisms which include locally enhanced silicon and cobalt diffusion, silicide spike formation during CoSi thin film growth, and volumetric contractions during the CoSi $\to$ CoSi$\sb2$ phase …
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Growth and characterization of low temperature silicon selective epitaxy
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1990.
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Growth and optical monitoring of organometallic vapor phase epitaxy
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1996.
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Structure/processing relationships in vapor-liquid-solid nanowire epitaxy
… Once controllable and repeatable Si nanowire epitaxy on Si substrates was established, we were able to focus on development of both III-V wires on Si substrates as well as Si substrates with topographic features and silicon-on-insulator (SOI) wafers. Growth abnormalities between Au-colloid …
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Multiscale models of the metalorganic vapor phase epitaxy process
… processes, specifically metalorganic vapor phase epitaxy (MOVPE). The difficulty in creating an overall modeling strategy for the MOVPE process is that important processes occur on a wide range of length and time scales. Gas phase heat and mass transfer affect the flux of species to the surface, …
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