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Showing 1 to 18 of 18 for “"EBIC"”.
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Elektrische Mikrocharakterisierung von elektrochemisch hergestellten CIS-Solarzellen mittels EBIC
… Interpretation von Electron-Beam-Induced-Current(EBIC)-Messungen an CIS-Solarzellen. Die EBIC-Messungen werden sowohl im Proben-Querschnitt (JEBIC) als auch planar (PEBIC) durchgeführt. Bei der JEBIC-Auswertung wird das Signal mit der lateralen Dosis des e-Strahls entfaltet. Die Ortsauflösung der …
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Carrier transport properties measurements in wide bandgap materials
… (OBIC) and electron beam induced current (EBIC) time of flight transient measurements. These techniques consist of measuring the current response to the drift and diffusion of generated electron-hole pair carriers created by a short-duration pulse of radiation. Under OBIC, a short duration …
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Advanced Electron-Beam Techniques for Solar Cell Characterization
… together with electron beam induced current (EBIC) to investigate defects in photovoltaic devices. It was found that combination of these two techniques could provide complementary information that clearly distinguishes the morphological and electrical nature of the defects. The first …
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Defect characterization of antimonide-based type-II superlattices for infrared detection
… application of electron beam induced current (EBIC) measurements. For these EBIC measurements, using first-principle analysis of the low-injection diffusion of carriers generated by inelastic scattering of high-energy electrons, we develop theoretical models to characterize minority carrier …
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Verbal behaviour development for children with autism
… the Early Behavioural Intervention Curriculum (EBIC) was developed as a comprehensive framework for delivering Early Intensive Behavioural Intervention (EIBI) to children with autism. Secondly, the effectiveness of the EBIC was evaluated through analysis of process data collected during the …
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Characterization of, and novel architectures for, strained-layer superlattice infrared photodetectors
… a new approach to electron beam induced current (EBIC) measurements, used to study the diffusion characteristics of InGaAs/InAsSb superlattices. By measuring the current generated by the electron beam of a scanning electron microscope (SEM), EBIC allows us to extract the minority carrier diffusion …
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Nanostructured photovoltaics : improving device efficiency and measuring carrier transport
… Furthermore, electron beam-induced current (EBIC) was used to study charge transport in PbS QD films. It is shown that holes are the minority carrier in PbS QD films treated with tetrabutylammonium iodide (TBAI). This finding indicates that the thickness of OBHJ devices composed of a PbS-TBAI …
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High dimensional feature selection under interactive models
… studies of the new model selection criterion EBIC (Chen and Chen, 2008) to interactive models and .explore its selection consistency. With the application of EBIC, we develop a novel feature selection procedure, called sequential L1 regularization algorithm (SLR), under high dimensional space …
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The Trapped Charge Interfacial Modulation of the Electron Beam Induced Current in Metal Oxide Semiconductor Capacitors
… ERASE state, the electron beam induced current (EBIC) exhibits an abrupt reduction in the lateral current response--the trapped charge interfacial modulation (TCIM) of the EBIC. A new technique for extracting the Fu and Sah (23) device model parameters from a single spot-mode transient was …
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Diffusion characterization of antimony-based type-II superlattices using electron beam induced current and time-resolved photoluminescence
… by using electron beam induced current (EBIC) and time-resolved photoluminescence (TRPL) technologies. Moreover, we investigate how the molar composition of antimony and gallium affect on the diffusion characteristics of this materials.
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Antimony-based type-II superlattice infrared photodetectors on indium-arsenide substrates
… low-temperature electron beam induced current (EBIC) to study structural defects. Through this work, the optical absorption of the undoped substrate was shown to be significantly lower than that of GaSb. The detectors have a cutoff wavelength (50% re- sponsivity) of 9.5 um at 78 K. Their R0A …
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Photovoltaic modeling and grain boundary recombination in poly-silicon
… by the electron beam induced current (EBIC) technique. A nonuniform passivation depth was observed. The nature of the passivation mechanism was addressed. It was found that hydrogen saturation of dangling bonds in Si grain boundaries is not the only mechanism for hydrogen passivation.
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Theory and Experiment of Antimony-Based Type-Ii Superlattice Infrared Photodetectors
… obtained by electron beam induced current (EBIC) technique. By successfully modeling the QE of InAs/GaSb superlattice photodiodes, we ensure that the depletion region in InAs/GaSb superlattice photodiodes is effective in collecting the photoexcited carriers. Understanding the dark current …
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GaAsP/InGaP heterojunction bipolar transistors for III-V on Si microelectronics
… density of 3.7 x 106 cm-2 measured by PV-TEM and EBIC. This density is appropriate for fabrication of minority-carrier devices such as HBTs. GaAsP/InGaP HBTs were fabricated on both GaAs and Si substrates with a range of defect densities to measure the effect on DC performance and prove the …
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Laserstrahlverfahren zur Fertigung kristalliner Silizium-Solarzellen
… Sekunden. <br>Anhand von SNMS - Messungen sowie EBIC - Untersuchungen an LFC - kontaktiertem Silizium konnte nachgewiesen werden, dass eine Aluminium p+ - Dotierung in der Kontaktzone erzielt wird. Diese p+ - Dotierung führt zur Ausbildung eines lokalen Aluminium Rückseitenfeldes (L-Al-BSF), …
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Alternative Analytical and Experimental Procedures to Explore Rumen Fermentation as Driven by Nutrient Supplies
… experiments. Two network analysis approaches, EBIC-LASSO network (ELN) and Bayesian learning network (BLN) were leveraged to explore the relationships among rumen fermentation parameters in continuous culture experiments. Unidirectional ELN illustrated prominent variables while BLN, which …
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Growth and characterization of gallium arsenide phosphide and gallium phosphide on silicon for III-V/Si multi-junction solar cells
Submission published under a 24 month embargo labeled 'Closed Access', the embargo will last until 2024-08-01
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Electron Injection-induced Effects In Iii-nitrides: Physics And Applications
This research investigated the effect of electron injection in III-Nitrides. The combination of electron beam induced current and cathodoluminescence measurements was used to understand the impact of electron injection on the minority carrier transport and optical properties. In addition, the …