Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 9 of 9 for “"Droplet Epitaxy"”.
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The Study of Coupling in InGaAs Quantum Rings Grown by Droplet Epitaxy
The use of metal droplet epitaxy may provide a novel method of growing laterally coupled nanostructures. We will present optical studies of InAs/GaAs nanostructures which result in twin quantum dots (QD) formed on a single quantum ring (QR). Previous studies have investigated the coupling between …
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Growth of narrow band gap semiconductor nanowires on silicon and graphitic substrates by droplet epitaxy
… nanowires (NWs) on silicon and graphite by droplet epitaxy. First, the growth conditions of In droplets suitable for the nucleation of NWs was identified. Vertically-aligned and non-tapered InAs NWs were then realized on bare Si. It is shown that the diameter and areal density of NWs are …
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Development of Nanostructured Light Emitters in Gallium Nitride
… grown by quasi-two-temperature and modified droplet epitaxy methods. Refractive index engineering of GaN via the manufacture of porous structures is explored, and the integration of InGaN QWs with porous distributed Bragg reflectors (DBRs) is reported, with a corresponding increase in LED …
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Microscopy and Spectroscopy of Materials for Blue Single Photon Sources
… quantum dots can be grown: modified droplet epitaxy and via growth of InGaN islands. It is hoped that gaining a deeper understanding of the growth processes and structural evolution upon capping will allow us to have greater control over dot size, geometry and density during growth. …
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Telecom Wavelength Quantum Devices
… mode of dot growth was investigated. Known as droplet epitaxy (D-E), QDs grown in this mode showed a fourfold reduction in the FSS compared to dots grown in the Stranski-Krastanow mode. This improvement would allow observation of polarisation-entanglement in the telecom C-band. In subsequent …
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Quantum dot-based Entangled-Light Emitting Diodes (E-LED) for quantum relays
… the QD emission, an E-LED was developed based on droplet epitaxy (D-E) QDs, using a different QD growth technique. The relevant chapter outlines the process of QD growth and finally demonstration of quantum entanglement from an electrically injected diode, yielding improvements compared to …
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Self-assembled strained nanostructures for light emission grown using molecular beam epitaxy
… dot in a well (DWELLs), sub-monolayer QDs and droplet epitaxy QDs, while 1D elongated structures include quantum dashes and nanowires (NWs). The optical properties of nanostructures can be controlled through size, composition, strain and band-offsets during epitaxial growth and can be tailored …
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A study of InAs based quantum structures for use in optoelectronic devices
… The NW samples were grown by molecular beam epitaxy (MBE); self-catalysed droplet epitaxy was used as the growth mechanism for them. To improve the optical properties of InAs NWs, we further optimised the MBE growth for the NWs based on our previous growth understanding, which resulted in …
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Growth of undoped and doped IIInitride nanowires and their characterization
… substrates by Plasma-assisted Molecular Beam Epitaxy (PAMBE). It has been found that the change of growth parameters (e.g. III-V ratio, growth temperature etc.) greatly influences the morphology of NWs. Nitrogen-rich condition is necessary to have columnar growth for both GaN and InN NWs as …