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Showing 1 to 7 of 7 for “"Drift mobility"”.
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Drift Mobility Measurements and Electrical Characterization in Thin Film Cadmium Telluride Solar Cells
… In this thesis, I’ll report electron and hole drift mobilities measurements in thin film CdTe solar cells based on two characterization methods: time-of-flight and photocapacitance. For a deposition process similar to that used for high-efficiency cells, the electron drift mobilities are in the …
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Carrier transport in undoped and doped films of amorphous arsenic triselenide
… both the dark d.c. conductivity and hole drift mobility have been studied as a function of temperature and applied electric field. Measurements of the d.c. conductivity have been extended to lower temperatures than in previous studies (down to 165K as compared with 280K). A full discussion …
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ΦΑΙΝΟΜΕΝΑ ΜΕΤΑΦΟΡΑΣ ΑΜΟΡΦΩΝ ΗΜΙΑΓΩΓΩΝ
… CONDUCTIVITY AMORPHOUS SEMICONDUCTORS. VALUES OF DRIFT MOBILITY HAVE BEEN OBTAINED FROM THE STEADY STATE AND TRANSIENT PHOTOCONDUCTIVITY MEASUREMENTS. THEABOVE TECHNIQUES WERE ALSO USED TO CHARACTERISE FILMS OF GLOW DISCHARGE A-SI:HDEPOSITED UNDER DIFFERENT PREPARATION CONDITIONS.
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Dispersive Transport and Drift Mobilities in Methylammonium Lead Iodide Perovskites
… time-of-flight measurements to determine the drift mobilities of electrons and holes in the perovskite methylammonium lead iodide. I found evidence of dispersive transport for both photocharge carriers. I have made transient temperature-dependent studies of the drift mobility and the …
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Theory of polaron mobility
… it is shown that the low-temperature polaron drift mObility is given rigorously by IJ. :; e'T/m * , where 'T is the polaron lifetime"" and m* its effective masso This relationship is verified explicitly to lowest nontrivial order in the coupling constant by using the Kubo formula. Various …
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Excitons in cuprous oxide: high mobilities and strain confinement
… to measure the diffusion constant, D, and the drift mobility, 11, of paraexdtons, as well as a theoretical model to explain the unusual results. .An externally applied inhomO'::feIl-""'Ous stress gradient was used to provide the motive force for the mobility measurement. Very large values of D …
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Electronic transport properties of thin films of amorphous silicon
… d.c. conductivity, electron drift mobility, transient and steady state photoconductivity and optical absorption experiments were carried out on thin films of amorphous Silicon. These measurements reveal wide variations in the electronic transport properties of specimens of …