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Showing 1 to 4 of 4 for “"Drift diffusion models"”.

  1. The Effect of Polarization and InGaN Quantum Well Shape in Multiple Quantum Well Light Emitting Diode Heterostructures

    … emitting diodes (LEDs) employing semi-classical drift-diffusion models has used reduced polarization constants without much physical explanantion. This paper investigates possible physical explanations for this effective polarization reduction in InGaN LEDs through the use of the simulation …

    calpoly Repository record for The Effect of Polarization and InGaN Quantum Well Shape in Multiple Quantum Well Light Emitting Diode Heterostructures (opens in a new tab)

  2. How trial correlations and feedback shape sequential decision-making

    … under more natural conditions, we extend drift-diffusion models to obtain the normative form of evidence accumulation in a series of 2AFC trials with the correct choice evolving as a two-state Markov process. We analyze 3 different feedback cases: withholding trial-to-trial feedback, …

    houston Repository record for How trial correlations and feedback shape sequential decision-making (opens in a new tab)

  3. Two-Dimensional Modelling of Novel Back-Contact Solar cells

    … for reducing the complexity of two-dimensional drift-diffusion simulations are investigated for a back-contact perovskite cell. Analytic expressions for the relationship in both the low extraction velocity and high extraction velocity regimes are demonstrated, and the conditions where these …

    cambridge Repository record for Two-Dimensional Modelling of Novel Back-Contact Solar cells (opens in a new tab)

  4. Investigation into digital circuit design with GaAs/Ga2O3 heterostructure MOSFETs

    … electron mobility. For the first time compact models of complimentary GaAs/Ga2O3 MOS are developed to enable an investigation into establishing a digital design methodology for GaAs MOS. Drift-diffusion models are developed and calibrated to measured device data. These models then provide …

    glasgow Repository record for Investigation into digital circuit design with GaAs/Ga2O3 heterostructure MOSFETs (opens in a new tab)