Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 3 of 3 for “"Drei-Fünf-Halbleiter"”.
-
Growth and characterisation of group-III nitride-based nanowires for devices
One of the main goals of this thesis was to get more insight into the mechanisms driving the growth of nitride nanowires by plasma-assisted molecular beam epitaxy (PA-MBE). The influence of the group-III and group-V flux as well as the substrate temperature Tsub has been studied leading to the …
-
Rashba-Effekt in niedrigdimensionalen InGaAs/InP Strukturen
In this thesis the spin-orbit coupling of electrons in low dimensional InGaAs/InP heterostructures, referred to as Rashba Effect, is investigated. It focuses on the basic features of the spin-orbit interaction in quasi one-dimensional structures (quantum wires) with typical widths of 150 to 1000 …
-
AlGaN/GaN MBE 2DEG heterostructures : interplay between surface-, interface- and device-properties
Due to their wide band gap and high bond strength, the III-N semiconductors can be used for violet, blue and green light emitting devices as well as for high temperature and high power transistors. In comparison to conventional AlGaAs/GaAs heterostructures the AlGaN/GaN material system offers new …