Global ETD Search

Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.

Results

Showing 1 to 4 of 4 for “"Downhole Communications"”.

  1. Design of a High Temperature GaN-Based VCO for Downhole Communications

    … This paper presents a high temperature VCO for downhole communication system. The proposed VCO is designed and prototyped using 0.25 μm GaN on SiC RF transistor which has extremely high junction temperature capability. Measurements show that the proposed VCO can operate reliably under ambient …

    vt Repository record for Design of a High Temperature GaN-Based VCO for Downhole Communications (opens in a new tab)

  2. Design of a High Temperature GaN-Based Variable Gain Amplifier for Downhole Communications

    … frequency (IF) variable gain amplifier (VGA) for downhole communications, which can operate up to an ambient temperature of 230 °C. The proposed VGA is designed using 0.25 μm GaN on SiC high electron mobility transistor (HEMT) technology. Measured results at 230 °C show that the VGA has a peak …

    vt Repository record for Design of a High Temperature GaN-Based Variable Gain Amplifier for Downhole Communications (opens in a new tab)

  3. A High Temperature RF Front-End of a Transceiver for High Speed Downhole Communications

    … the field in many areas, such as well logging downhole telemetry systems, power networks, sensors, and actuators. In the past, the industry has managed to use the existing electronics at temperatures up to 150 oC. However, declining reserves of easily accessible natural resources have motivated …

    vt Repository record for A High Temperature RF Front-End of a Transceiver for High Speed Downhole Communications (opens in a new tab)

  4. A High Temperature Wideband Low Noise Amplifier

    … maximum available gain (ZTCMAG) biasing for a downhole communication system. The proposed LNA is designed and prototyped using 0.25μm GaN on SiC RF transistor technology, which is chosen due to the high junction temperature capability. Measurements show that the proposed LNA can operate …

    vt Repository record for A High Temperature Wideband Low Noise Amplifier (opens in a new tab)