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Showing 1 to 5 of 5 for “"Downhole Communication System"”.

  1. A High Temperature Wideband Power Amplifier for a Downhole Communication System

    … wells, the operating environments for electronic systems become harsher, especially due to high temperatures. It is essential to design electronic circuits and systems to be able to withstand these extreme temperatures. The proposed power amplifier (PA) has been designed for a downhole

    vt Repository record for A High Temperature Wideband Power Amplifier for a Downhole Communication System (opens in a new tab)

  2. Design of a High Temperature GaN-Based VCO for Downhole Communications

    … This paper presents a high temperature VCO for downhole communication system. The proposed VCO is designed and prototyped using 0.25 μm GaN on SiC RF transistor which has extremely high junction temperature capability. Measurements show that the proposed VCO can operate reliably under ambient …

    vt Repository record for Design of a High Temperature GaN-Based VCO for Downhole Communications (opens in a new tab)

  3. A High Temperature Wideband Low Noise Amplifier

    … maximum available gain (ZTCMAG) biasing for a downhole communication system. The proposed LNA is designed and prototyped using 0.25μm GaN on SiC RF transistor technology, which is chosen due to the high junction temperature capability. Measurements show that the proposed LNA can operate …

    vt Repository record for A High Temperature Wideband Low Noise Amplifier (opens in a new tab)

  4. A High Temperature RF Front-End of a Transceiver for High Speed Downhole Communications

    … by either using passive/active cooling systems or tolerating degraded performance. Recently, there has been a demand for more robust electronics that can operate at higher temperature without sacrificing the performance or the use of any weighty, power hungry, complex cooling systems. …

    vt Repository record for A High Temperature RF Front-End of a Transceiver for High Speed Downhole Communications (opens in a new tab)

  5. A High Temperature Reference Voltage Generator with SiC Transistors

    … of these wells can exceed 210 °C. Contemporary downhole systems have reached their depth and temperature limitations in deep basins and are no longer meet the high requirements in harsh environment industries. Therefore, robust electronic systems that can operate reliably in harsh environments …

    vt Repository record for A High Temperature Reference Voltage Generator with SiC Transistors (opens in a new tab)