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Showing 1 to 3 of 3 for “"Double-side cooled"”.

  1. Double-Side Cooled 3.3 kV, 100 A SiC MOSFET Phase-Leg Modules for Traction Applications

    This thesis presents the development of a double-side cooled 3.3 kV, 100 A SiC MOSFET phase-leg power module for heavy-duty traction applications. Parasitic extraction and thermal simulations of the module showed a parasitic inductance of 2.89 nH and junction temperature of 108.3 °C at a heat flux …

    vt Repository record for Double-Side Cooled 3.3 kV, 100 A SiC MOSFET Phase-Leg Modules for Traction Applications (opens in a new tab)

  2. Design, Analysis and Experimental Verification of a Mechanically Compliant Interface for Fabricating Reliable, Double-Side Cooled, High Temperature, Sintered Silver Interconnected Power Modules

    This research developed a double-side power electronics packaging scheme for high temperature applications exemplified by 1200 V, 150 A silicon devices. The power modules, based on both quarter and half-bridge topologies, were assembled using sintered silver device attachment rather than …

    vt Repository record for Design, Analysis and Experimental Verification of a Mechanically Compliant Interface for Fabricating Reliable, Double-Side Cooled, High Temperature, Sintered Silver Interconnected Power Modules (opens in a new tab)

  3. Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes

    … Due to the low kT of Ga2O3 material, junction-side-cooled (JSC) packaging configuration is necessary for Ga2O3 devices. For the packaged device, its junction-to-case thermal resistance (RθJC) is measured in the bottom-side-cooled (BSC) and junction-side-cooled (JSC) configuration by the …

    vt Repository record for Design, Fabrication, Characterization, and Packaging of Gallium Oxide Power Diodes (opens in a new tab)