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Showing 1 to 14 of 14 for “"Doping profile"”.

  1. Inverse doping profile analysis for semiconductor quality control

    Myers, Joseph Kenneth2009

    wichita-thes

  2. Silicon Doping Profile Measurement Using Terahertz Time Domain Spectroscopy

    Jen, Chih-Yu

    rit Repository record

  3. CMOS inverse doping profile extraction and substrate current modeling

    Pop, Eric, 1975-Massachusetts Institute of Technology1999

    Thesis (S.B. and M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.

    mit Repository record

  4. Ultra Low Power SubThreshold Device Design Using New Ion Implantation Profile

    Hossain, MunemUniversity of Missouri--Kansas City2016

    … aspects of integrated circuit design is doping profile of a transistor along its length, width and depth. Devices for super-threshold circuit usually employ halo and retrograde doping profiles in the channel to eliminate many unwanted effects like DIBL, short channel effect, threshold …

    umkc Repository record

  5. A new inverse-modeling-based technique for sub-100-nm MOSFET characterization

    Lee, Zachary Ka Fai, 1967-Massachusetts Institute of Technology1999

    … effects, extensive use of non-uniform doping profiles are found in modem devices. Among these are the super-steep retrograde (SSR) channel profile, characterized by a low dopant concentration near the surface and a high dopant concentration at some depth from the surface, and the halo …

    mit Repository record

  6. High-speed silicon electro-optic modulator for electronic photonic integrated circuits

    Gan, FuwanMassachusetts Institute of Technology2007

    … using a carrier lifetime reduction and a graded doping profile. A bandwidth of 1-2GHz has been demonstrated so far which is considerably smaller than the design bandwidth due to high series resistance. Modulators based on the forward-biased PIN structure without lifetime reduction have a low …

    mit Repository record

  7. The effects of strain on carrier transport in thin and ultra-thin SOI MOSFETs

    Lauer, Isaac, 1976-Massachusetts Institute of Technology2005

    … the gate in control with gate oxide scaling and doping profile design. In thin-body geometries, silicon thickness is a new, powerful scaling parameter. Much like with gate oxide scaling, the electrostatics improve with thinner films. This means that the limits of scaling thin-body devices are …

    mit Repository record

  8. TCAD approaches to multidimensional simulation of advanced semiconductor devices

    Baravelli, Emanuele <1980>Alma Mater Studiorum - Università di Bologna2008

    … fin patterning as well as different doping profile definitions. Combining statistical simulations with experimental data, potentialities and shortcomings of the FinFET architecture are analyzed and useful design guidelines are provided, which boost feasibility of this technology for …

    bologna Repository record

  9. Indium-Gallium-Arsenide Quantum Wire Infrared Photodetectors

    Tsai, Chiun-LungUniversity of Illinois at Urbana-Champaign2015

    … ratio of 1.80/2.35 along with an appropriate doping profile. The QRIP device fabricated using these optimal parameters showed a detection wavelength of 8.4 mum and a peak detectivity of 8.97 x 109 cmHz1/2/W at 10 K under a normal-incident scheme. This device displayed characteristics of low …

    uiuc Repository record

  10. Optimal MOSFET design for low temperature operation

    Jackson, Keith M. (Keith Matthew)Massachusetts Institute of Technology2001

    … at 200 K, a detailed analysis of channel doping profile design to achieve the highest on current at the nominal channel length, while meeting the off-current limit for the worst case channel length is performed. Using an inverse modeling approach, a 2-D numerical simulator is first …

    mit Repository record

  11. Sulfur Implanted GaSb for Non-Epitaxial Photovoltaic Devices

    Herrera, DanielVirginia Tech2019

    … to substrate type and control over the resulting doping profile. Pre- vious work has shown beryllium (Be+) implantation to be a suitable method for fabricating a diode in an n-type GaSb substrate, opening the possibility for other ions to be considered for implanting into both n-type and p-type …

    vt Repository record

  12. The Influence of Contact Transparency on the Superconducting Proximity Effect in Thin Semiconducting Films

    Vissers, Michael R.University of Illinois at Urbana-Champaign2010

    … at the interface. Careful construction of the doping profile in the cap allows for extremely transparent junctions just prior to the onset of superconductivity, the most transparent Nb-GaAs junctions yet reported. The transparency of the junction can be evaluated by calculating the number of …

    uiuc Repository record

  13. LATERAL POWER DEVICES AND TECHNOLOGIES FOR HIGH VOLTAGE INTEGRATED CIRCUITS

    Tadikonda, RamakrishnaDe Montfort University2006

    … Transistor (LIGBT) with a Variation in Lateral Doping (VLD) drift region is investigated using simulations and measurements. The results show significant advancements in breakdown voltages and latch up current densities without compromising forward voltage drop and turn-off losses, furthermore, …

    de-montfort Repository record

  14. Laser beam induced current studies of Hg1-xCdxTe photodiodes

    Gluszak, Edward A.Edith Cowan University, Research Online, Perth, Western Australia2006

    … and device parameters that influence the LBIC profile. This work significantly develops the physical theory, and quantitative application of LBIC for the characterization of photodiodes. Numerical modeling of the LBIC problem using the full drift-diffusion and φ,ψ treatment of an n-on-p …

    edithcowan Repository record