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Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 277 for “"Dopants"”.
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Stabilizing Degenerate Dopants in Colloidal Semiconductor Nanocrystals
… over the introduction and removal of degenerate dopants from semiconductor nanostructures presents exciting opportunities for careful study of their electronic structures and associated capabilities. This thesis explores the careful incorporation and characterization of the stability of …
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Broad excitation of rare earth dopants in chalcogenide glasses
… subsequent transfer of energy to the rare earth dopants, mediated by defect states in the glass. Studies on the effect of changing the rare earth dopant, the host glass bandgap, the host glass composition, and the sample temperature have all been performed. From numerous similarities to the host …
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Broad Band Excitation of Rare-Earth Dopants in Chalcogenide Glasses
… subsequent transfer of energy to the rare earth dopants, mediated by defect states in the glass. Studies on the effect of changing the rare earth dopant, the host glass bandgap, the host glass composition, and the sample temperature have all been performed. From numerous similarities to the host …
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Effect of dopants on the defect structure of single crystal aluminum oxide.
Massachusetts Institute of Technology. Dept. of Metallurgy and Materials Science. Thesis. 1969. Ph.D.
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N-type doping of organic thin films using a novel class of dopants
… n-type doping of organic matrices using organic dopants. In order to circumvent stability limitations of strong organic donors, I produce the donor from a stable precursor compound in situ. As an example, the cationic dye pyronin B chloride is studied as a dopant in an 1,4,5,8-naphthalene …
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Process Dependence of Defects and Dopants in Wide Band Gap Semiconductor and Oxides
… on the process dependence of the defects and dopants in wide band gap semiconductors and oxides of high-k dielectrics, ZnO and MoS<sub>2 </sub>.</p><p>Ultrahigh speed microelectronics demands high mobility semiconductors such as Ge. We are exploring how to process high-k oxides on Ge to …
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Analysis of transport properties in a zaz graphene nanoribbon junction using various dopants
A 12 atom wide ZAZ Graphene Junction was simulated and its transport properties were analyzed. I-V curves, calculated by nonequilibrium Greens function method combined with the density functional theory under external bias, showed varying semiconducting characteristics. Further, the width of the …
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Dispersion and Integration of Dopants by Mechanical Alloying in Complex Hydrogen Storage Materials
Prior work had found that MgH2, a thermodynamically hindered system, can be destabilized through the introduction of Si but no microstructural information has been presented. In this work, confirmation of the proposed forward dehydriding mechanism to Mg2Si was obtained in the MgH 2 + Si system …
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Effect of Dopants on the Local Atomic Structure and Sintering Behavior of Bismuth Sodium Titanate
… for numerous applications by the addition of dopants. However, because of environmental and health concerns regarding lead, lead-free alternatives are demanded by politics. One of the two most promising lead-free replacement materials is the ferroelectric bismuth sodium titanate …
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Novel dopants for n-type doping of electron transport materials: cationic dyes and their bases
The history of silicon technology showed that controlled doping was a key step for the realization of e®ective, stable and reproducible devices. When the conduction type was no longer determined by impurities but could be controlled by doping, the breakthrough of classical microelectronics became …
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Polymerizable dopants capable of high light output and pulse shape discrimination for application in plastic scintillators
… and synthesized as primary polymerizable dopants are reported here for the first time. Co-polymerizing PPO monomers into the matrix have proven to increase mechanical and thermal stability and have reached high loadings without the leaching of dopants to their surroundings. In addition, …
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The effects of dopants and complexions on grain boundary diffusion and fracture toughness in α-Al2O3
… lattice and grain boundaries is insensitive to dopants and complexion type. We hypothesize that extrinsic point defects mostly form bound clusters and are immobile. This fact coupled with compensation by impurities makes the lattice diffusivity insensitive to dopant type. The lack of dopant …
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Towards Engineering and Understanding of Guest Host Interaction Between Dopants and Liquid Crystals in Liquid Crystal Displays
… off state is an important part of this study. Dopants have been designed with a head, tail and linker core moiety that are compatible with dielectrically positive and negative liquid crystals. Head groups will have polar substituents such as heteroarenes, fluorine and bromine, to exert control …
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Hydrogen migration in monoclinic ZrO₂ and the effects of defects and dopants assessed by first-principles calculations
Zirconium-based alloys, which have been employed as cladding materials in nuclear industry, pick up hydrogen during service because of corrosion in water. This is one of the degradation processes that challenge the safe operation of nuclear reactors. Composition of commercial zirconium-based alloys …
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RARE-EARTH AND ALKALINE-EARTH HALIDES WITH SCINTILLATION ACTIVATORS AND CO-DOPANTS STUDIED BY PICOSECOND OPTICAL ABSORPTION SPECTROSCOPY
… halides with scintillation activators and co-dopants showing excellent properties for spectroscopic gamma radiation detection attract a surge in research activity on their scintillation mechanisms. There is still much to learn about excited states in these materials. Understanding behaviors of …
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An investigation into the use of group VI elements as dopants in III-V materials prepared by molecular beam epitaxy
An electrochemical cell Pt/Ag/AgI/Ag2X/Pt (X=S,Se) has been used as a highly controllable source of S2 or Se2 molecules for n-type doping of GaAs and Ga1As grown by Molecular Beam Epitaxy (MBE). This source produces a pure oeam ot chalcogen dimers at low temperature (200-300°C) and is simply …
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Effects of transition metal doping on multiferroic ordering in ni3v2o8 and fevo4
… to lower temperatures with all transition metal dopants. For Zn doping, the rates of the suppression of both TH and TL with dopant fraction are consistent with simple site dilution for two-dimensional spin systems, with the suppression of TH consistent with Ising spins and the suppression of TL …
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