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Showing 1 to 3 of 3 for “"Dopant profiling"”.
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Progress towards quantitative dopant profiling with the scanning electron microscope
… obtain an accurate quantitative two-dimensional dopant profiling technique with high spatial resolution. Secondary electron (SE) imaging in the scanning electron microscope (SEM) has been shown to be a very promising technique for dopant profiling in the past. However, the limited accuracy …
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Multi-Dimensional Dopant Profiling With Atomic Resolution by Scanning Tunneling Microscopy
… surface opens the way to STM studies of dopant distributions in Si(100). STM topographic images, dI/dV images and current image tunneling spectroscopy (CITS) were acquired across the lateral PN junctions of Si devices. Two-dimensional dopant (carrier) profiles were extracted from CITS …
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SECONDARY ELECTRON SPECTROSCOPY INSIDE THE SCANNING ELECTRON MICROSCOPE AND ITS MATERIAL SCIENCE APPLICATIONS
… mapping space-charge regions, characterising the dopant concentration of silicon wafers and junctions that agree well with conventional techniques. It does this by overcoming longstanding problems in the subject of SEM dopant contrast, such as oxide scattering and image contrast reversal.