Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 6 of 6 for “"Dopant activation"”.
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Laser Annealing and Dopant Activation in III-V Materials
… by achieving high active concentrations of dopants in these materials. We have broadly characterized LSA for III-V and III-N materials with a high-throughput, combinatorial processing method. With this method, we explored kinetically limited states that are inaccessible using typical heating …
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Investigations of ultra shallow junction ion implanted biaxial tensile strained silicon by means of X-Ray, Raman and photoacoustic techniques
… to enhanced electron mobilities and, for certain dopants, increased electrical activation. For these reasons it is the material of interest in this thesis. The prospects for industrial implementations of "-Si are heavily dependent on the effects of device processing steps, and the controllability …
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Boron and phosphorous implantation into (100) germanium : modeling and investigation of dopant annealing behavior
… critical properties like Pearson parameters and dopant activation temperatures are not well established. In this study, boron and phosphorus were implanted into (100) germanium with energies ranging from 20 to 320 keV and doses of 5 x 10^{13} to 5 x 10^{16} cm^{-2}. The behavior of the boron and …
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Computational study of advanced semiconducting materials for next-generation electronic devices
… to their promise, including insufficiently high dopant activation and insufficiently low contact resistivity for InGaAs, and strong degree of dopant segregation towards the surface for Ga2O3. In this thesis, we address these challenges with a computational modeling approach, based on ab initio …
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Micro-structural modifications of semiconductor systems under irradiation: experiment, modeling and simulation analysis.
… is the post-implant kinetics of the defects-dopant system in the extremely far-from-the equilibrium conditions caused by the laser irradiation both in the non-melting and melting regime. For this purpose, the activation mechanism in the solid phase of phosphorus implanted silicon under …