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Showing 1 to 9 of 9 for “"Dopant Diffusion"”.
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Characterization of Dopant Diffusion in Bulk and lower dimensional Silicon Structures
… and drain regions and the redistribution of the dopants in the channel greatly impact the electrical characteristics of the fabricated device. Thus, in nano-scale and reduced dimension transistors, a tight control of doping levels and formation of pn junctions is required. Therefore, deeper …
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Nanowire Zinc Oxide MOSFET Pressure Sensor
… Silicon Dioxide growth, photolithography, dopant diffusion, and aluminum metallization were used to fabricate a basic MOSFET. In the other hand, a combination of aluminum anodization, alumina barrier layer removal, ZnO atomic layer deposition (ALD), and wet etching for nanowire release were …
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Micro-structural modifications of semiconductor systems under irradiation: experiment, modeling and simulation analysis.
… is the post-implant kinetics of the defects-dopant system in the extremely far-from-the equilibrium conditions caused by the laser irradiation both in the non-melting and melting regime. For this purpose, the activation mechanism in the solid phase of phosphorus implanted silicon under …
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Defect reactions and impurity control in silicon
… scientific issues of defect reactions involving dopants and impurities in Si, and the applications of this knowledge to reactive ion etching (RIE) and Fe gettering processes. The reactions among self-interstitials (Sii), vacancies (V), impurities (C, 0), and dopants (B, P) in Si produce …
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Analysis of Thermally Diffused Single Mode Optical Fiber Couplers
The phenomenon of dopant diffusion as a viable means of coupler fabrication is investigated. It is well known that the diffusion of dopants can improve the uniformity of multimode star couplers manufactured by the fused biconical taper technique. The theoretical basis for the same phenomenon in a …
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Ge-on-Si laser for silicon photonics
… affecting the strain of the Ge devices. Dopant concentration above intrinsic growth concentration, ~1x1019cm-3 phosphorus, have been achieved through a series of methods non-CMOS, spin-on dopant; and CMOS, implantation and delta doping. All the techniques explored use enhanced dopant …
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Development and Characterization of Inkjet-Printed Poly-Si Passivating Contacts for Silicon Solar Cells
… using an inkjet printer with a phosphorus dopant ink. By optimizing the printing parameters and annealing conditions, uniform and effective doping was achieved, resulting in excellent passivation quality with an implied open_circuit voltage (iVoc) of 729 mV and a contact resistivity of 5.4 …
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Development and Characterization of Inkjet-Printed Poly-Si Passivating Contacts for Silicon Solar Cells
… using an inkjet printer with a phosphorus dopant ink. By optimizing the printing parameters and annealing conditions, uniform and effective doping was achieved, resulting in excellent passivation quality with an implied open_circuit voltage (iVoc) of 729 mV and a contact resistivity of 5.4 …
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Materials science and design for germanium monolithic light source on silicon
… trenches and corners; (3) introduction of n-type dopant into Ge-on-Si thin films while studying the threading dislocation behavior in n-Ge during annealing; (4) Design an external cavity Ge laser integrated with Si waveguides for a low threshold current and single mode operation. Heavy n-type …