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Showing 1 to 9 of 9 for “"Direct tunneling"”.

  1. Direct tunneling modulation and signal mixing of semiconductor lasers

    … lifetime. In addition, a recently discovered tunneling mechanism inside the transistor laser device structure paves the way for ultrahigh-speed direct modulation of laser optical output. In this work, the operation of the transistor laser is reviewed and compared against the conventional diode …

    uiuc Repository record for Direct tunneling modulation and signal mixing of semiconductor lasers (opens in a new tab)

  2. Theory of electron transport processes in tunnel diodes

    … of Fermi-Dirac distributions in non-equilibrium tunneling integrals is justified. The direct tunneling mechanism is examined from two points of view and is shown to be described about equally well by either. In subsequent sections, indirect tunnellng and the phenomena of excess and thermal …

    uiuc Repository record for Theory of electron transport processes in tunnel diodes (opens in a new tab)

  3. Characterization of ultrathin gate dielectrics and multilayer charge injection barriers

    … in the ultrathin regime (<35 A) feature a large direct tunneling leakage current. The presence of this leakage current requires a reevaluation of standard characterization techniques as well as a reevaluation of the continued usefulness of SiO_2 as the gate dielectric of choice for future …

    njit Repository record for Characterization of ultrathin gate dielectrics and multilayer charge injection barriers (opens in a new tab)

  4. Tunneling nanoelectromechanical switches based on compressible self-assembled molecules

    … NEM switch, termed a "squitch", based on direct tunneling through a metal-molecule-metal junction, whose tunneling gap can be electromechanically modulated by compressing the molecular layer. A sub-5 nm change in the tunneling gap in the absence of direct contact between electrodes leads …

    mit Repository record for Tunneling nanoelectromechanical switches based on compressible self-assembled molecules (opens in a new tab)

  5. Hysteresis and memory effects in nanocrystal embedded MOS capacitors

    … silicon nanocrystals and quantum mechanical direct tunneling current for charge storage. This thesis presents the work done to characterize the memory effect in nanocrystal embedded metal-oxide-semiconductor (NC-MOS) capacitors, the fundamental components of the nanocrystal memory. Various …

    mit Repository record for Hysteresis and memory effects in nanocrystal embedded MOS capacitors (opens in a new tab)

  6. Synthesis, Characterisation and Device Application of Silicon Nanoparticles produced by Mechanical Attrition

    … by the matrix or insulating binding medium. Direct tunneling and eld emission (FE) are the major transport mechanism for all concentrations at low voltages, while thermally activated processes, such as hopping and thermionic emission are major contributors at low concentrations. At higher …

    cape-town Repository record for Synthesis, Characterisation and Device Application of Silicon Nanoparticles produced by Mechanical Attrition (opens in a new tab)

  7. Static random-access memory designs based on different FinFET at lower technology node (7nm)

    … carriers. Consequently, the source-to-drain tunneling probability is improved. Moreover, edge direct tunneling leakage components can be reduced by controlling the electric field at the gate-drain junction . There is a limitation on the extent of underlap on drain or source sides because the …

    umkc Repository record for Static random-access memory designs based on different FinFET at lower technology node (7nm) (opens in a new tab)

  8. Quantum Transport and Electric-Field Effects in Layered Topological Semimetals and Magnetic Materials

    … Junction. We showed that our devices were in a direct tunneling regime at temperatures lower than 20 K and 10 K for graphite-JJ and FeSe-JJ, respectively. It has been shown that NiPS3 undergoes a spin-flop transition in magnetic fields parallel to the ab plane and larger than 6 T. Although we …

    arkansas Repository record for Quantum Transport and Electric-Field Effects in Layered Topological Semimetals and Magnetic Materials (opens in a new tab)