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Showing 1 to 1 of 1 for “"Dipole Interface Doping"”.
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Dopant Incorporation in InAs/GaAs Quantum Dot Infrared Photodetectors
… response. From this dissertation research, doping related dipole fields are found to be responsible for excessive dark current in QDIPs. </p><p>InAs/GaAs QDIPs were grown using solid source molecular beam epitaxy (MBE) with different doping conditions. The QDIPs were optically characterized …